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A kind of photoresist and its preparation method and application and photolithography method

A photoresist and photolithography technology, which is applied in the direction of photomechanical equipment, optics, and photosensitive material processing, etc., can solve the problem of insufficient light transmittance, photoresist blocking etching, and insufficient photoresist blocking deep trench etching And other problems, to achieve the effect of reducing the rate of etching, reducing the energy of lithography reaction, and speeding up the rate of exposure

Active Publication Date: 2022-02-08
福建泓光半导体材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

One is that the adhesion between the photoresist and the substrate surface is not good, resulting in voids or gaps where the bottom of the photoresist pattern contacts the substrate surface
The second is that after filling the deep trench, the photoresist at the bottom of the deep trench cannot be fully developed due to insufficient light transmittance or incomplete photoacid reaction, and the remaining photoresist blocks the etching
The third is that the photoresist is not enough to block deep trench etching

Method used

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  • A kind of photoresist and its preparation method and application and photolithography method
  • A kind of photoresist and its preparation method and application and photolithography method
  • A kind of photoresist and its preparation method and application and photolithography method

Examples

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Embodiment 1

[0040] This example is used to illustrate the preparation method of the ternary copolymerization photoresist resin provided by the present invention.

[0041] The resin is a copolymer prepared by copolymerization of comonomers in a solvent in the presence of a free radical initiator. The comonomers are composed of the following compounds in parts by weight: monomer I 28.6g, monomer I Body II 50.0g, monomer III 22.4g. The polymerization reaction formula is as follows:

[0042]

[0043] Preparation method: Add 28.6g of monomer I, 50.0g of monomer II, 22.4g of monomer III and 250g of tetrahydrofuran into a 500ml three-necked flask, and pass nitrogen gas for ten minutes under stirring conditions, then heat to 65°C, drop in 10 minutes Add 54.0g azobisisobutyrocyanide solution (4 gram azobisisobutyrocyanide is dissolved in 50 gram tetrahydrofuran), continue to react after 6 hours, reaction product deprotection, obtain final product, its weight-average molecular weight is 28200, ...

Embodiment 2

[0045] This example is used to illustrate the preparation method of the ternary copolymerization photoresist resin provided by the present invention.

[0046] The resin is a copolymer prepared by copolymerization of comonomers in a solvent in the presence of a free radical initiator. The comonomers are composed of the following compounds in parts by weight: monomer I 28.5g, monomer I Body II 58.0g, monomer III 13.5g. The polymerization reaction formula is as follows:

[0047]

[0048]Preparation method: Put 28.5g of monomer I, 58.0g of monomer II, 13.5g of monomer III and 250g of tetrahydrofuran in a 500ml three-necked flask. 54.0g azobisisobutyronitrile solution (4 gram azobisisobutyrocyanide is dissolved in 50 gram tetrahydrofuran), continue to react after 20 hours, reaction product deprotection, obtain final product, its weight-average molecular weight is 25400, molecular weight distribution is 1.9.

Embodiment 3

[0050] This example is used to illustrate the preparation method of the quaternary copolymerization photoresist resin provided by the present invention.

[0051] The resin is a copolymer prepared by copolymerization of comonomers in a solvent in the presence of a free radical initiator. The comonomers are composed of the following compounds in parts by weight: monomer I 35.5g, monomer I Body II 40.0g, monomer III (with the structure shown in formula (3), wherein, R 3 is methyl, R 4 for X is hydrogen) 12.0g, monomer III (with the structure shown in formula (3), wherein, R3 is methyl, R 4 for X is methyl) 12.5g. The polymerization reaction formula is as follows:

[0052]

[0053] Preparation method: Add 35.5g of monomer I, 40.0g of monomer II, 12.0g of monomer III, 12.5g of monomer III and 250g of tetrahydrofuran into a 500ml three-necked flask, and pass nitrogen gas for ten minutes under stirring conditions, and then heat to 70 ℃, 54.0g of azobisisobutyronitrile solu...

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Abstract

The invention belongs to the field of semiconductors and integrated circuits, and discloses a photoresist, its preparation method and application, and a photolithography method. The photoresist contains a resin and a photoacid generator, and the resin is formed by copolymerizing 20-45wt% of the unit monomer I, 35-65wt% of the unit monomer II, and 10-30wt% of the unit monomer III, The structures of the unit monomer I, the unit monomer II and the unit monomer III are respectively shown in formula (1), formula (2) and formula (3). The photoresist provided by the present invention can improve the adhesion between the photoresist and the surface of the substrate, accelerate the exposure rate of the photoresist, reduce the reaction energy of the photoresist, reduce the rate at which the photoresist is etched or reduce the development time. The probability of reaction occurs, and there is no void or gap between the photoresist and the substrate surface. After filling to the bottom of the deep trench, it can still be fully developed, and the surface of the substrate pattern is still completely covered by the photoresist.

Description

technical field [0001] The invention belongs to the field of semiconductors and integrated circuits, and in particular relates to a photoresist, its preparation method and application, and a photolithography method. Background technique [0002] In the past technology, if the storage density per unit size of NAND flash memory is to be increased, the production process must be improved. Now 3D memory cell arrays are used to increase the cell density and data capacity under the existing process, while the core size of the chip (Die Size) hardly increases. In the new stacking architecture, the pillars made of electrode materials will vertically penetrate the multi-layer stacked storage elements, and can share peripheral circuits. [0003] Etching technology is used to perforate holes in the stacked layers (ie, multi-layer gate electrodes and insulating films). The pillars will allow the deposition process to fill these holes, and the pillars are surrounded by gate circuits. T...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42
CPCG03F7/422G03F7/426
Inventor 肖楠宋里千
Owner 福建泓光半导体材料有限公司
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