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CMOS low noise amplifier performance degradation prediction method based on BPNN

A low-noise amplifier and low-noise amplification technology, which is applied in the field of BPNN-based CMOS low-noise amplifier performance degradation prediction, can solve the problems of increasing test time and achieve the effect of solving the problem of low accelerated degradation voltage

Inactive Publication Date: 2019-01-25
TIANJIN UNIV
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Problems solved by technology

But this increases test time

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  • CMOS low noise amplifier performance degradation prediction method based on BPNN
  • CMOS low noise amplifier performance degradation prediction method based on BPNN
  • CMOS low noise amplifier performance degradation prediction method based on BPNN

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[0034] The BPNN-based CMOS low-noise amplifier performance degradation prediction method of the present invention is described in detail in conjunction with a 50-500MHz CMOS low-noise amplifier.

[0035] Step 1, establish a BPNN prediction model with multiple inputs and multiple outputs, that is, a BPNN prediction model with 9 input variables and 9 output variables, including an input layer, a hidden layer, and an output layer. The hidden layer is set to two layers, and the activation of the first layer The function is Sigmod, and the second layer is a linear function.

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Abstract

The invention discloses a CMOS low noise amplifier performance degradation prediction method based on BPNN, including: a BPNN prediction model with multiple inputs and multiple outputs is established;Measurement / acceleration / measurement technology is used to accelerate the degradation of low noise amplifier performance and obtain low noise amplification performance parameters, the degradation parameters of low noise amplifier are selected, the selected data is divided into two parts, the time point T0 is selected, and the data before T0 is used as training data, and the data after T0 is usedas data to be predicted,the BPNN model is trained with training data; the data before time T0 are input into the selected BPNN model, and the data after time T0 are predicted, the predicted value is compared with the traditional test value, and the error is calculated. Based on the existing performance degradation data, the method trains the BPNN model, predicts the non-occurrence degradation situation, can effectively reduce the degradation test time, and provides technical support for the non-occurrence of the main degradation mechanism.

Description

technical field [0001] The invention relates to the field of reliability prediction of low-noise amplifiers, and more specifically relates to a method for predicting performance degradation of CMOS low-noise amplifiers based on BPNN. Background technique [0002] The low noise amplifier is one of the important modules of the RF transceiver, and its performance directly determines the noise characteristics of the entire system. Due to the hot carrier injection (HCI) and negative bias temperature instability (NBTI) effects of CMOS transistors, the performance of CMOS LNAs will degrade as the working time increases. Before the performance of the low-noise amplifier fails, obtain its performance degradation, and then replace or maintain the system in advance to avoid economic losses caused by system failure. Therefore, predicting the performance degradation of LNAs is a necessary means in practical engineering applications. [0003] The traditional prediction method for predic...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50G06N3/04G06N3/08
CPCG06N3/084G06F30/36G06F30/367G06N3/045
Inventor 马建国杨闯傅海鹏
Owner TIANJIN UNIV