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A STT-MRAM-based solid-state memory device power-off recovery method

A technology of solid-state memory and storage devices, which is applied to the protection of storage content from loss, instrumentation, and electrical digital data processing, etc. It can solve problems such as data loss and data destruction, and achieve the effect of increasing system reliability and simplifying design complexity.

Active Publication Date: 2019-01-29
CETHIK GRP
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] NAND flash is used as a storage device. When NAND flash is in the programming state, abnormal power failure may cause various abnormalities, such as data loss and data destruction.

Method used

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  • A STT-MRAM-based solid-state memory device power-off recovery method
  • A STT-MRAM-based solid-state memory device power-off recovery method
  • A STT-MRAM-based solid-state memory device power-off recovery method

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Embodiment Construction

[0022] The technical solution of the present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments, and the following embodiments do not constitute a limitation of the present invention.

[0023] like figure 1 As shown, the present invention is based on a STT-MRAM solid-state storage device power-off recovery method, comprising the following steps:

[0024] Step S1, when the power is abnormally cut off, compress the LBA mapping table stored in the system memory into the STT-MRAM using the HASH algorithm, and store the compressed LBA mapping HASH table in the STT-MRAM.

[0025] The solid-state storage device (SSD) of this embodiment includes a system memory, a storage medium, and a magnetic random access memory (STT-MRAM). The system memory generally adopts DRAM, and the storage medium can be NOR flash or NAND flash. The following uses NAND flash as an example for illustration. When the NAND flash is in the programmin...

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Abstract

The invention discloses a STT-MRAM-based solid-state memory device power-off recovery method. The method includes compressing LBA mapping table stored in system memory to STT-MRAM by HASH algorithm when abnormal power-off occurs, and storing the compressed LBA mapping HASH table in the STT-MRAM; when the power is restarted after an abnormal power-down occurs, scanning the data corresponding to thecompressed LBA mapping HASH table, judging whether the corresponding data is valid, synchronizing the compressed LBA mapping HASH table into the system memory if the data is valid, searching the valid data in the reverse direction if the data is invalid, and reconstructing the LBA mapping table in the system memory according to the searching result; brush that LBA map table in the system memory down to the storage medium, and the abnormal power-off recovery is completed. After the SSD is abnormally powered off, the invention can accurately and quickly rebuild the LBA mapping table, increase the system reliability and simplify the system design complexity.

Description

technical field [0001] The invention belongs to the technical field of computer storage devices, and in particular relates to a power-off recovery method based on an STT-MRAM solid-state storage device. Background technique [0002] There are currently two main types of computer external storage, magnetic disk (HDD) and solid-state drive (SSD). The main storage medium in SSD is flash memory (FLASH MEMORY). Compared with HDD, SSD has faster read and write speed, better random access performance, and lower power consumption for reading and writing. Therefore, with the improvement of FLASH MEMORY manufacturing process and the reduction of cost , SSD has been more and more widely used. [0003] The storage medium FLASH in the current commercial SSD mainly has two structures: NOR and NAND. Compared with NOR FLASH, NAND FLASH has higher storage density and lower cost, and is currently the mainstream storage medium of SSD. However, whether it is NAND FLASH or NOR FLASH, the read...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06G06F12/16
CPCG06F3/0614G06F3/0679G06F12/16
Inventor 蔡晓晰李炜丁钢波杨杰曹学成徐庶
Owner CETHIK GRP
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