Gas piping system, chemical vapor deposition device, film deposition method, and method for producing SiC epitaxial wafer
A technology of gas piping and film forming method, which is applied in chemical instruments and methods, crystal growth, gaseous chemical plating, etc., can solve the problems of inability to obtain high-quality films stably, poor reproducibility of epitaxial layers, and reduced crystallinity. , to achieve the effect of suppressing the difference between gas flow rate and gas pressure, suppressing clogging, and improving the degree of freedom
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
no. 1 Embodiment approach
[0036] figure 1 It is a schematic diagram of the chemical vapor phase growth apparatus concerning 1st Embodiment. figure 1 The illustrated chemical vapor phase growth apparatus 100 includes a gas piping system 10 , a reaction furnace 20 , and an exhaust pump 30 . Various gases are supplied from the gas piping system 10 to the reaction furnace 20 . Known ones can be used for the reaction furnace 20 and the exhaust pump 30 .
[0037] The gas piping system 10 is a gas piping system of an operating deflation system including a supply line 1 , an exhaust line 2 , an operating line 3 , an exhaust line 4 , and a valve 5 .
[0038] A plurality of supply lines 1 are provided for each gas supplied to the reaction furnace 20 . One end of each supply line 1 is connected to a gas supply mechanism (not shown) such as a gas cylinder.
[0039] Each supply line 1 branches into a run line 3 and a purge line 4 . Valves 5 for controlling gas flow are respectively provided at the branch porti...
no. 2 Embodiment approach
[0069] image 3 It is a schematic diagram of the chemical vapor phase growth apparatus 110 which concerns on 2nd Embodiment. The gas piping system 15 in the chemical vapor phase growth apparatus 110 according to the second embodiment is different in that the operation line 13 is separated until it reaches the reaction furnace 20 . Other configurations are the same as those of the chemical vapor phase growth apparatus 100 according to the first embodiment, and the same symbols are attached to the same configurations.
[0070] If the operating lines 13 are separated from each other, the gases causing accumulation in the operating lines 13 are prevented from mixing with each other. That is, clogging in the operation line 13 can be suppressed. On the other hand, if the operating line 13 is separated, the timing of supplying the necessary gas to the reaction furnace 20 may be different from that of the chemical vapor phase growth apparatus 100 according to the first embodiment. ...
no. 3 Embodiment approach
[0073] Figure 4 It is a schematic diagram of the chemical vapor phase growth apparatus 120 which concerns on 3rd Embodiment. In the gas piping system 16 in the chemical vapor phase growth apparatus 120 according to the third embodiment, a part of the exhaust line 24 is connected to the exhaust line 2, and the remaining exhaust line 24 is connected to another independent exhaust pump 31. different. Other configurations are the same as those of the chemical vapor phase growth apparatus 100 according to the first embodiment, and the same symbols are attached to the same configurations.
[0074] In the chemical vapor phase growth apparatus 120 according to the third embodiment, the accumulated gases also do not merge in the exhaust line 2 . That is, the gas that causes accumulation is completely separated from supply to the gas piping system 16 to discharge. Therefore, there is no possibility that the accumulated gas will be mixed to generate a solid product.
[0075] On the ot...
PUM
| Property | Measurement | Unit |
|---|---|---|
| Melting point | aaaaa | aaaaa |
| Boiling point | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More