Piezoelectric ceramic element with low capacitance change rate, piezoelectric ceramic and manufacturing method thereof
A technology of piezoelectric ceramic components and piezoelectric ceramics, applied in piezoelectric devices/electrostrictive devices, electrical components, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the performance degradation of piezoelectric buzzers , affecting the stability of piezoelectric ceramic materials and other issues, to achieve the effect of reducing the capacitance change rate, low cost, and excellent piezoelectric performance
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[0026] The above-mentioned low capacitance change rate piezoelectric ceramics can be directly prepared according to existing preparation methods. In order to further improve its piezoelectric performance and stability, the present invention provides a method for manufacturing the above-mentioned low capacitance change rate piezoelectric ceramics. include:
[0027] S1. After the raw materials are prepared according to the general stoichiometric formula of piezoelectric ceramics with a low capacitance change rate, pre-sintered piezoelectric ceramics are obtained through pre-milling, drying, briquetting, and pre-sintering.
[0028] Raw materials are configured according to the general stoichiometric formula of low capacitance change rate piezoelectric ceramics. The raw materials here are to weigh the corresponding metal oxides or metal salts according to the stoichiometric ratio of each metal element in the general stoichiometric formula, and the capacitance is stable. agent, mix...
Embodiment 1
[0044] A low capacitance change rate piezoelectric ceramic element, which includes low capacitance change rate piezoelectric ceramics and metal electrodes.
[0045] The general stoichiometric formula of piezoelectric ceramics with low capacitance change rate is: 0.82Pb(Zr m Ti n )O3-0.05Pb(Zn 1 / 3 Nb 2 / 3 )O 3 -0.1Pb(Ni 1 / 3 Nb 2 / 3 )O 3 -0.03Pb(Sb 1 / 3 Nb 2 / 3 )O 3 +ywt% capacitance stabilizer, where m / n=0.94; y=0.5. The proportion of the component niobium zinc-niobium nickel-niobium antimony-lead zirconate titanate pentad system is 99.5wt%.
[0046] The capacitor stabilizer is a mixture of cerium oxide, aluminum oxide and cadmium oxide, among which CeO 2 Accounting for 40wt% of the capacitor stabilizer, Al 2 o 3 It accounts for 40wt% of the capacity stabilizer, and CdO accounts for 20wt% of the capacity stabilizer.
[0047] Low capacitance change rate piezoelectric ceramic elements are made by the following methods:
[0048] According to the general stoichiometric f...
Embodiment 2
[0053] A low capacitance change rate piezoelectric ceramic element, which includes low capacitance change rate piezoelectric ceramics and metal electrodes.
[0054] The general stoichiometric formula of piezoelectric ceramics with low capacitance change rate is: 0.82Pb(Zr m Ti n )O 3 -0.05Pb(Zn 1 / 3 Nb 2 / 3 )O 3 -0.1Pb(Ni 1 / 3 Nb 2 / 3 )O 3 -0.03Pb(Sb 1 / 3 Nb 2 / 3 )O 3 +ywt% capacitance stabilizer, where m / n=0.94; y=0.2. The proportion of the component niobium zinc-niobium nickel-niobium antimony-lead zirconate titanate pentad system is 99.8wt%.
[0055] The capacitor stabilizer is a mixture of cerium oxide, aluminum oxide and cadmium oxide, among which CeO 2 Accounting for 40wt% of the capacitor stabilizer, Al 2 o 3 It accounts for 40wt% of the capacity stabilizer, and CdO accounts for 20wt% of the capacity stabilizer.
[0056] The piezoelectric ceramic element with low capacitance change rate is prepared by the method provided in Example 1.
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