Method for reducing impurity content of CVD (chemical vapor deposition) synthetic diamond

A technology for synthesizing diamond and impurity content, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of impurity atoms in the substrate and lower diamond synthesis quality

Active Publication Date: 2019-02-19
航天科工(长沙)新材料研究院有限公司
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Problems solved by technology

[0005] Aiming at the problem that the quality of diamond synthesis cannot be solved by substrate impurity atoms in the prior art, the present invention provides a met

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  • Method for reducing impurity content of CVD (chemical vapor deposition) synthetic diamond
  • Method for reducing impurity content of CVD (chemical vapor deposition) synthetic diamond
  • Method for reducing impurity content of CVD (chemical vapor deposition) synthetic diamond

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[0041] In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the present invention will be further described in detail below in conjunction with specific embodiments and according to the accompanying drawings. It should be noted that, in the drawings or descriptions in the specification, the content not described and some English abbreviations are the content well known to those of ordinary skill in the art. Some specific parameters given in this embodiment are only for demonstration, and the values ​​may be correspondingly changed to appropriate values ​​in different real-time manners.

[0042] This embodiment discloses a method for reducing the impurity content of CVD-synthesized diamond, the method is mainly by setting a polycrystalline diamond coating on the substrate and covering the substrate with diamond to prevent the introduction of impurity atoms caused by etching of the substrate .

[0043] The thickness of the polycrys...

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Abstract

The invention provides a method for reducing the impurity content of CVD (chemical vapor deposition) synthetic diamond. A polycrystalline diamond coating is arranged on a substrate, and the diamond isused for covering the substrate to prevent substrate etching from leading to introduction of impurity atoms. The method has the advantages that a polycrystalline diamond film is deposited on the surface of the substrate, contact between diamond seed crystals and the foreign substrate is blocked, the impurity atoms of the substrate are effectively isolated, and the synthesis quality of the monocrystal diamond is improved; the substrate is coated with the polycrystalline diamond coating, and the surface roughness of the substrate is enhanced, so that the remarkable effect on position fixation of the diamond seed crystals is achieved, limited space can be utilized maximally, the monocrystal diamond can be synthesized as much as possible, and the cost can be reduced; the thermal conductivityof the polycrystalline diamond coating is high, the temperature uniformity of the diamond seed crystals is enhanced, and stable growth of the monocrystal diamond for a long time is benefited; the method is applied to the field of diamond synthesis.

Description

technical field [0001] The invention relates to the field of diamond synthesis, in particular to a method for reducing the impurity content of CVD synthetic diamond. Background technique [0002] Diamond has attracted everyone's attention due to its excellent physical and chemical properties. However, natural diamond reserves are limited, so people have developed a variety of synthetic diamond methods, such as high temperature and high pressure (HPHT), hot wire chemical vapor deposition (HJCVD), microwave plasma chemical vapor deposition (MPCVD). Among them, the microwave plasma chemical vapor deposition (MPCVD) synthetic diamond method is the most effective method for synthesizing high-quality, large-area diamond because there is no introduction of impurities. Schematic diagram of the synthesis of diamond by Microwave plasma chemical vapor deposition (Microwave plasma chemical vapor deposition) figure 1 shown. [0003] The quality of diamond synthesized by MPCVD is relat...

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Application Information

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IPC IPC(8): C30B29/04C30B25/18C30B28/14
CPCC30B25/186C30B28/14C30B29/04
Inventor 黄翀彭国令
Owner 航天科工(长沙)新材料研究院有限公司
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