Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for improving visible light transmittance of vanadium dioxide film by using dilute sulfuric acid etching

A technology of vanadium dioxide and dilute sulfuric acid, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problem of visible light transmittance not meeting building requirements, etc., to improve visible light transmittance, improve Porosity, easy-to-control effects

Inactive Publication Date: 2019-03-01
TIANJIN UNIV
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems in the prior art, the present invention provides a method for improving the visible light transmittance of the vanadium dioxide film by etching with dilute sulfuric acid, so as to solve the problem of visible light when the traditional vanadium dioxide planar film is applied to the smart window in the prior art. The problem that the transmittance does not meet the architectural requirements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving visible light transmittance of vanadium dioxide film by using dilute sulfuric acid etching
  • Method for improving visible light transmittance of vanadium dioxide film by using dilute sulfuric acid etching

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] (1) Cleaning of sapphire substrate:

[0026] Put the sapphire sheet into deionized water, acetone and absolute ethanol in sequence for ultrasonic cleaning, each cleaning time is 20 minutes, to remove the inorganic and organic impurities on the surface; then wash it with deionized water, and finally clean the sapphire substrate Put into absolute ethanol for later use.

[0027] (2) Preparation of metal vanadium thin film:

[0028] The cleaned sapphire substrate is placed in the vacuum chamber of the DPS-Ⅲ ultra-high vacuum target magnetron sputtering coating machine, and the metal vanadium with a mass purity of 99.99% is used as the target material, and the argon gas with a mass purity of 99.999% is used as the target material. Working gas, background vacuum 8.0×10 -4 Pa, the argon gas flow rate is 48mL / min, the sputtering working pressure is 2Pa, the sputtering power is 120W, and the sputtering time is 8min. Repeat this step to prepare 2 samples.

[0029] (3) Preparat...

Embodiment 2

[0034] (1) Cleaning of sapphire substrate:

[0035] Put the sapphire sheet into deionized water, acetone and absolute ethanol in sequence for ultrasonic cleaning, each cleaning time is 20 minutes, to remove the inorganic and organic impurities on the surface; then wash it with deionized water, and finally clean the sapphire substrate Put into absolute ethanol for later use.

[0036] (2) Preparation of metal vanadium thin film:

[0037] The cleaned sapphire substrate is placed in the vacuum chamber of the DPS-Ⅲ ultra-high vacuum target magnetron sputtering coating machine, and the metal vanadium with a mass purity of 99.99% is used as the target material, and the argon gas with a mass purity of 99.999% is used as the target material. Working gas, background vacuum 8.0×10 -4 Pa, the argon gas flow rate is 48mL / min, the sputtering working pressure is 2Pa, the sputtering power is 120W, and the sputtering time is 8min. Repeat this step to prepare 2 samples.

[0038] (3) Preparat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for improving visible light transmittance of a vanadium dioxide film by using dilute sulfuric acid etching. A vanadium dioxide film, prepared through combining magnetron sputtering and rapid annealing, is etched by adopting a dilute sulfuric acid treatment mode, and the continuous planar vanadium dioxide film is etched into separate particles in an acid treatment manner in a whole preparation process, so that the porosity of the film is improved. According to the method disclosed by the invention, required process conditions are low and are easily controlled, and the visible light transmittance of VO2 can be effectively improved. A vanadium metal film is sputtered firstly, then, thermal annealing oxidation is carried out, and finally, soaking etching is carried out by using dilute sulfuric acid, so that the manufacturing cost is low, and the method is applicable to large-batch industrial production.

Description

technical field [0001] The invention relates to a method for improving the visible light transmittance of a physically sputtered planar vanadium dioxide thin film by etching with dilute sulfuric acid. Background technique [0002] Energy shortage is one of the major challenges in today's world. Evidence shows that building energy consumption accounts for 30-40% of total energy consumption, and this part of consumption is mainly used to maintain the thermal comfort of buildings. Reducing this part of energy consumption will make a huge contribution to energy conservation and emission reduction. Replacing traditional windows with smart windows will be one of the effective ways to solve this problem, because windows are the main heat exchange channel between buildings and the external environment. The main types of smart windows include electrochromic, photochromic, aerochromic and thermochromic. Among them, thermochromic smart windows have the lowest energy consumption and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35C23C14/18C23C14/02C23C14/58
CPCC23C14/021C23C14/185C23C14/35C23C14/5806C23C14/5853
Inventor 梁继然郭津榜赵一瑞
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com