Method for improving visible light transmittance of vanadium dioxide film by using dilute sulfuric acid etching
A technology of vanadium dioxide and dilute sulfuric acid, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problem of visible light transmittance not meeting building requirements, etc., to improve visible light transmittance, improve Porosity, easy-to-control effects
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[0024] Example 1
[0025] (1) Cleaning of sapphire substrate:
[0026] Put the sapphire sheet into deionized water, acetone and absolute ethanol in order for ultrasonic cleaning. Each cleaning time is 20 minutes to remove inorganic and organic impurities on the surface; then rinse with deionized water, and finally the sapphire substrate Put it in absolute ethanol for later use.
[0027] (2) Preparation of metal vanadium film:
[0028] The cleaned sapphire substrate is placed in the vacuum chamber of the DPS-Ⅲ ultra-high vacuum target magnetron sputtering coating machine, using metal vanadium with a mass purity of 99.99% as the target, and argon with a mass purity of 99.999% as the target Working gas, background vacuum degree 8.0×10 -4 Pa, argon gas flow rate is 48 mL / min, sputtering working pressure is 2 Pa, sputtering power is 120 W, and sputtering time is 8 min. Repeat this step to prepare 2 samples.
[0029] (3) Preparation of vanadium dioxide film:
[0030] The same two metal vanad...
Example Embodiment
[0033] Example 2
[0034] (1) Cleaning of sapphire substrate:
[0035] Put the sapphire sheet into deionized water, acetone and absolute ethanol in order for ultrasonic cleaning. Each cleaning time is 20 minutes to remove inorganic and organic impurities on the surface; then rinse with deionized water, and finally the sapphire substrate Put it in absolute ethanol for later use.
[0036] (2) Preparation of metal vanadium film:
[0037] The cleaned sapphire substrate is placed in the vacuum chamber of the DPS-Ⅲ ultra-high vacuum target magnetron sputtering coating machine, using metal vanadium with a mass purity of 99.99% as the target, and argon with a mass purity of 99.999% as the target Working gas, background vacuum degree 8.0×10 -4 Pa, argon gas flow rate is 48 mL / min, sputtering working pressure is 2 Pa, sputtering power is 120 W, and sputtering time is 8 min. Repeat this step to prepare 2 samples.
[0038] (3) Preparation of vanadium dioxide film:
[0039] The same two metal vanad...
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