A power device with super junction structure and its manufacturing method
A technology of power devices and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., capable of solving problems such as short circuit, increased leakage, and reduced breakdown voltage
Active Publication Date: 2021-09-21
南京多基观测技术研究院有限公司
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
However, in some special applications, especially when the application environment is poor, such as high temperature, high humidity, etc., the power device is prone to reliability problems. The voltage drops, and even burning and short circuit will occur in severe cases
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Embodiment Construction
[0031] The invention mainly provides a solution to the problem of reduced reliability of the power device when the application environment is poor.
[0032] In order to make the objectives, technical solutions and beneficial technical effects of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described implementation Examples are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0033] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The in...
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Abstract
The invention discloses a power device with a super-junction structure and a manufacturing method thereof. The power device with a super-junction structure includes a super-junction structure located in a terminal region, and the super-junction structure includes at least one first conductivity type a semiconductor pillar and at least one second semiconductor pillar of the second conductivity type, the first semiconductor pillars and the second semiconductor pillars are alternately arranged laterally; the superjunction structure further includes a second isolation layer and a third isolation layer, the second isolation layer and One end of the second semiconductor column is connected; the third isolation layer is connected to one end of the first semiconductor column. The super-junction structure in the power device with the super-junction structure of the present invention is equivalent to a plurality of PN junctions in parallel, which can pass a large leakage current, so as to play an important role in the power device with the super-junction structure. source area for protection.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a power device with a super junction structure and a manufacturing method thereof. Background technique [0002] The withstand voltage capability of a power device mainly depends on the reverse bias breakdown voltage of a specific PN junction in the power device. In order to obtain a certain current capability, a power device is usually composed of many cells connected in parallel. When the power device is reverse withstand voltage, because the transverse electric field between the cells cancels each other, the breakdown generally does not occur inside the cell, but the outermost cell will break down due to the concentration of the electric field. Therefore, it is necessary to use junction termination to reduce the electric field and thus increase the breakdown voltage. [0003] Junction terminals are mainly divided into two types: truncated and extended. The extended typ...
Claims
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IPC IPC(8): H01L29/06H01L21/8222
CPCH01L21/8222H01L29/0634
Inventor 不公告发明人
Owner 南京多基观测技术研究院有限公司