Mems structure and capacitive sensors with mems structure, piezoelectric sensors, sound sensors

A technology for capacitive sensors and sound pressure conversion, which is applied in piezoelectric devices/electrostrictive devices, piezoelectric/electrostrictive transducers, microphones, sensors, etc., and can solve problems such as increased displacement

Active Publication Date: 2020-10-27
MMI SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] On the other hand, when a large pressure is applied to the diaphragm 122 from the side of the back plate 123, since there is no area where the diaphragm 122 and the silicon substrate 121 overlap when viewed from the normal direction of the diaphragm 122, the diaphragm 122 Since the opening (back chamber) 121a of the silicon substrate 121 can be penetrated, the displacement increases, and the stress may concentrate on the beam portion (not shown) supporting the diaphragm 122, causing damage

Method used

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  • Mems structure and capacitive sensors with mems structure, piezoelectric sensors, sound sensors
  • Mems structure and capacitive sensors with mems structure, piezoelectric sensors, sound sensors
  • Mems structure and capacitive sensors with mems structure, piezoelectric sensors, sound sensors

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Embodiment 1

[0077] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The embodiment shown below is one aspect of the invention of this application, and does not limit the technical scope of the invention of this application. In addition, the present invention can be applied to the entire capacitive sensor, and a case where the capacitive sensor is used as an acoustic sensor will be described below. However, if the capacitive sensor of the present invention is a sensor that detects the displacement of the diaphragm, it can also be used as a sensor other than an acoustic sensor. For example, in addition to pressure sensors, it can also be used as acceleration sensors or inertial sensors. In addition, it can obviously also be used as components other than sensors, such as a speaker that converts electrical signals into displacement. The following shows an example in which the vibrating part of the diaphragm is substantially quadrangular and ...

Embodiment 2

[0103] Next, Example 2 of the present invention will be described. In this embodiment, in particular, in the outer shape of the vibrating portion 11, the area arranged outside the outer shape of the rear chamber 2 is set as an area closer to the end portions 11b of each side, that is, the support portion 12, and the areas at both end portions 11b An example in which a convex stopper that abuts on the substrate 3 when the vibrating portion 11 is displaced to the substrate 3 side is provided will be described.

[0104] Picture 11 A diagram showing the vibrating portion 11, the supporting portion 12, the fixed film 13, and the rear chamber 2 of this embodiment viewed from the normal direction. Picture 11 (a) is the overall top view, Picture 11 (b) is an enlarged view of the vicinity of the support portion 12. In addition, Picture 12 (a) means Picture 11 (b) A-A' section, Picture 12 (b) means Picture 11 (b) B-B' section. Such as Picture 11 (b) and Picture 12 As shown in (b...

Embodiment 3

[0106] Next, Example 3 of the present invention will be described. In this embodiment, particularly in the area where the angle between the outer shape of the vibrating portion 11 and the closest outer shape of the rear chamber 2 is less than a predetermined angle, the outer shape of the vibrating portion 11 is separated from the outer shape of the rear chamber 2 by the distance The example above the predetermined distance will be explained.

[0107] Figure 13 It is a figure which shows the defect when the outer shape of the vibrating part 11 (that is, the end surface in a side view, the same applies hereinafter) and the outer shape (end surface) of the rear chamber 2 are too close. Figure 13 (a) is a diagram showing the relationship between the outer shape (end face) of the vibrating portion 11 in a state where the pressure is not acting on the diaphragm 5 and the outer shape (end face) of the back chamber 2. Figure 13 (b) is a diagram showing a phenomenon that occurs when pre...

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Abstract

The present invention provides a technology capable of obtaining a high S / N ratio and improving the pressure resistance to input pressure in a capacitive sensor manufactured using MEMS technology. The capacitive sensor of the present invention converts the displacement of the diaphragm into a change in the capacitance between the diaphragm and the back plate, wherein, viewed from the normal direction, a part of the outer shape of the diaphragm is arranged inside the opening of the substrate, Other parts of the outer shape of the diaphragm are disposed outside the opening of the substrate.

Description

Technical field [0001] The present invention relates to a MEMS structure, a capacitive sensor, a piezoelectric sensor having the MEMS structure, and an acoustic sensor having the capacitive sensor or piezoelectric sensor. More specifically, it relates to capacitive sensors, piezoelectric sensors, and acoustic sensors with diaphragms formed using MEMS technology. Background technique [0002] Currently, as a small microphone, a microphone using a sound sensor called ECM (Electret Condenser Microphone) is sometimes used. However, ECM is weak in heat resistance. In addition, in terms of digitization and miniaturization, microphones using capacitive sensors manufactured using MEMS (Micro Electro Mechanical Systems) technology have excellent performance. Therefore, in recent years, more A MEMS microphone is used (for example, refer to Patent Document 1). [0003] Among the above-mentioned capacitive sensors, there are cases in which a diaphragm that vibrates under pressure is arranged...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H04R7/04B81B3/00H01L29/84H04R1/02H04R7/22H04R17/02H04R19/04
CPCB81B3/00H01L29/84H04R1/02H04R7/04H04R7/22H04R17/02H04R19/04H04R19/005H04R2201/003B81B2201/0257B81B2203/0127B81B3/0072B81B2201/0264B81B3/0018H04R1/025B81B3/0021H04R7/08
Inventor村上步井上匡志堀本恭弘
OwnerMMI SEMICON CO LTD