Packaging film, and electronic device and preparation method thereof
A technology for encapsulating films and electronic components, applied in circuits, electrical components, electro-solid devices, etc., can solve the problems of poor performance stability of electronic devices, unstable quality of encapsulation films, and poor water and oxygen barrier capabilities, and achieve excellent water and oxygen barrier properties. , The effect of good packaging effect and long working life
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[0060] In another aspect, on the basis of the electronic device described above, an embodiment of the present invention provides a method for manufacturing the electronic device. combine Figure 1-3 , the preparation method of the electronic device includes the following steps:
[0061] providing a substrate, the substrate comprising a substrate and electronic components disposed on the substrate;
[0062] The packaging film 20 is formed on the substrate to package the electronic components.
[0063] The term "encapsulation" used in the present invention refers to covering the parts of the electronic components that need to be packaged with an encapsulation film layer. According to the realized characteristics or work requirements, different electronic component structures have different requirements for the packaged parts. Specifically, the The part where the above-mentioned electronic component needs to be packaged may be all the top surface and the side surface of the ele...
Embodiment 1
[0090] This embodiment provides an electronic device. It includes a substrate, QLED electronic components combined on the substrate and a packaging film for packaging the QLED electronic components. The structure of the electronic device is: ITO substrate / PEDOT:PSS (50nm) / poly-TPD (30nm) / quantum dot light-emitting layer (20nm) / ZnO (30nm) / silver (70nm) / glass glaze film layer (1μm ) / ceramic film layer (300nm). Among them, the glass glaze layer contains 62 parts of silicon dioxide, 20 parts of calcium oxide, 7 parts of zinc oxide, 7 parts of barium oxide and 4 parts of magnesium oxide.
[0091] The electronic device of this embodiment is prepared according to the following method:
[0092] S11: sequentially forming various layers on the ITO substrate according to the QLED structure of this embodiment, thereby forming a QLED;
[0093] S12: On the surface of the silver electrode of the QLED, a glass glaze film layer is screen-printed in vacuum; wherein,
[0094] The screen prin...
Embodiment 2
[0099] This embodiment provides an electronic device. It includes a substrate, QLED electronic components combined on the substrate and a packaging film for packaging the QLED electronic components. The structure of the electronic device is: ITO substrate / PEDOT:PSS (50nm) / poly-TPD (30nm) / quantum dot light-emitting layer (20nm) / ZnO (30nm) / silver (70nm) / glass glaze film layer (1.5 μm) / ceramic film layer (300nm). Among them, the glass glaze layer contains 62 parts of silicon dioxide, 20 parts of calcium oxide, 7 parts of zinc oxide, 7 parts of barium oxide and 4 parts of magnesium oxide.
[0100] The preparation method of the electronic device in this example refers to the preparation method of Example 1, wherein the screen printing process is: the scraping pressure should be about 60N / m at most, the scraper angle should be 20°, the curing temperature should be 150°C, and the curing time should be 200min.
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Abstract
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