An electrostatic discharge protection device and circuit

Abstract

The application discloses an electrostatic discharge protection device and a circuit, which are used to prevent damage to components in the logic gate circuit and protect the logic gate circuit when electrostatic discharge occurs in the logic gate circuit. The electrostatic discharge protection device includes a logic gate circuit and a first transistor. The logic gate circuit is used to realize the specified logic operation; the gate of the first transistor is suspended, the source of the first transistor is connected to the first electrode of the logic gate circuit, and the drain of the first transistor is connected to the second electrode of the logic gate circuit, It is used to protect the logic gate circuit when there is electrostatic discharge between the first electrode and the second electrode, and the first electrode and the second electrode are any two different electrodes in the source, gate and drain of the logic gate circuit; wherein , the source and drain of the first transistor are connected through an amorphous silicon layer.

Description

technical field [0001] The present application relates to the technical field of circuits, in particular to an electrostatic discharge protection device and a circuit. Background technique [0002] For electronic equipment, the electronic system that maintains its work usually consists of several circuits. And each circuit includes a plurality of logic gate circuits, and each logic gate circuit implements its own logic operation, so that the circuit completes related services. [0003] Due to reasons such as dry weather, friction, contact, and electromagnetic induction, an electrostatic discharge (electro static discharge, ESD) phenomenon may occur between electrodes of a logic gate circuit. When static electricity is generated between the two electrodes of the logic gate circuit, the high-voltage static electricity will cause a short circuit between the two electrodes, and at this time, the high-voltage static electricity will be released between the two electrodes. Elect...

AI Technical Summary

Problems solved by technology

One possible situation is that when an ESD phenomenon occurs between the gate and drain of the NAND logic gate circuit (hereinafter referred to as "NAND gate") in the GIP circuit, it will cause damage to the components in the NAND gate, and The NOT gate cannot realize the NAND operation, which leads to the inability of the GIP circuit to realize the shift of the strobe signal, which affects the screen display of the electronic device and affects the normal use of the user

Images