Production equipment and method of high-conductivity silicon monoxide
A silicon monoxide, high-conductivity technology, applied in silicon oxide, silicon dioxide, chemical instruments and methods, etc., can solve the problem of high resistivity of silicon monoxide, achieve industrialized production, ideal doping effect, and operation simple effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0032] as attached figure 1 As shown, a production equipment of silicon monoxide with high conductivity comprises a reaction device 1, a vacuum pump 2 communicated with the reaction device 1 pipeline, a dopant generating device 3 communicated with the reaction device 1 pipeline and The dopant source supply part 4 communicated with the dopant generation device 3 is provided with a circuitous fluid channel 11 inside the reaction device 1 , and the reaction device 1 is provided with a steam inlet. Silicon monoxide condenses in the reaction device in a gaseous state while directly participating in the reaction with the dopant, and the formation and doping of silicon monoxide particles are completed at the same time. The prepared nano-silicon monoxide not only has uniform particle size, but also uniform doping elements. Distribution, one-step doping method to effectively improve the conductivity of silicon monoxide.
[0033] Further, it also includes a supply device for generating...
Embodiment 2
[0045] A production method of high-conductivity silicon monoxide: mix silicon powder with a purity >99.5% and silicon dioxide powder uniformly at a molar ratio of 1.1:1, put them into the charging crucible of the supply device, and close the supply part of the dopant source The valve between the device and the dopant generating device, after completion, turn on the vacuum pump to evacuate the entire equipment. The vacuum degree is required to reach 100Pa, and heat the charging crucible, reaction device, and dopant generating device respectively, among which the charging crucible The heating temperature is 1250°C, the temperature of the reaction device is 800°C, the temperature of the dopant generating device is 700°C, and heat preservation starts after reaching the required temperature. At this time, the material in the charging crucible begins to sublimate and enters the reaction device under the action of negative pressure. Nitrogen gas is fed into the flow rate as the carri...
Embodiment 3
[0047] A production method of silicon monoxide with high conductivity: mix silicon powder with a purity >99.5% and silicon dioxide powder uniformly at a molar ratio of 1:0.9, then put them into the charging crucible of the supply device, and close the doping source supply part The valve between the device and the dopant generating device, after completion, turn on the vacuum pump to vacuumize the equipment, and the vacuum degree is required to reach 100Pa. The charging crucible, the reaction device, and the dopant generating device are respectively heated and heated, wherein the heating temperature of the charging crucible is 1250°C, the temperature of the material collection tank is 850°C, and the temperature of the dopant source decomposer is 600°C , After reaching the required temperature, start to keep warm. At this time, the material in the charging crucible begins to sublimate, and enters the reaction device under the action of negative pressure. Feed nitrogen as carrie...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 


