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A method to improve the precision of opc model

A model accuracy and model technology, applied in the field of improving OPC model accuracy, can solve problems such as the influence of model accuracy, limiting OPC model accuracy, size error, etc.

Active Publication Date: 2022-03-29
上海微阱电子科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existence of model error limits the accuracy of OPC model
The size of the auxiliary pattern is usually half or even smaller than the size of the main pattern. During the mask manufacturing process, it is more likely to cause dimensional errors, which will affect the accuracy of the model, thereby further affecting the performance of the device and product yield.

Method used

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  • A method to improve the precision of opc model
  • A method to improve the precision of opc model
  • A method to improve the precision of opc model

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Embodiment Construction

[0028] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0029] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly show the structure of the present invention for the convenience of description, the structures in the drawings are not drawn according to the general scale, and are drawn Partial magnification, deformation and simplification are included, therefore, it should be avoided to be interpreted as a limitation of the present invention.

[0030] In the following specific embodiments of the present invention, please refer to figure 1 , figure 1 It is a flowchart of a method for improving the accuracy of the OPC model in the present invention. Such as figure 1 Shown, a kind of method of improving OPC model precision of the present invention comprises the following steps:

[0031] St...

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Abstract

The invention discloses a method for improving the accuracy of an OPC model, comprising the following steps: step S01: collecting a set of measurement values ​​on a wafer; step S02: processing the measurement values, filtering out unreliable measurement values Data points; Step S03: Establish an initial OPC model based on the measurement data; Step S04: Convolve the layout graphics and optical signals for the main graphics, and correct the initial OPC model; Step S05: Convolve the layout graphics and optical signals for the auxiliary graphics Product, and further modify the initial OPC model; Step S06: Obtain a corrected OPC model with higher accuracy. The invention respectively performs signal convolution operation processing on the main graphics and the auxiliary graphics, respectively corrects the mask manufacturing errors of the main graphics and the auxiliary graphics, and can effectively improve the precision of the OPC model.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing technology, and more specifically, relates to a method for improving the accuracy of an OPC model. Background technique [0002] With the continuous development of integrated circuits and the continuous development of manufacturing technology towards smaller dimensions, the photolithography process has become the main bottleneck restricting the development of integrated circuits to smaller feature sizes. In deep sub-micron semiconductor manufacturing, the size of the key pattern is much smaller than the wavelength of the light source. Due to the diffraction effect of light, the pattern projected on the silicon wafer by the mask will change greatly, such as the change of line width and the corner Various optical proximity effects such as the rounding of the wire and the shortening of the line length. [0003] In order to compensate for the influence of these ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/36G03F7/20
CPCG03F1/36G03F7/70441
Inventor 卢意飞
Owner 上海微阱电子科技有限公司