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Vertical multi-junction structure molybdenum disulfide solar cell and preparation method thereof

A solar cell and molybdenum disulfide technology, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high cost of solar cell power generation, low voltage of single-chip battery power generation, and large amount of materials used, so as to reduce the amount of materials used , reduce optical loss, and absorb efficiently

Inactive Publication Date: 2019-03-15
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problems of high power generation cost of existing solar cells, large amount of materials used, and low power generation voltage of single-chip cells, and to provide a vertical multi-junction molybdenum disulfide solar cell and its preparation method

Method used

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  • Vertical multi-junction structure molybdenum disulfide solar cell and preparation method thereof
  • Vertical multi-junction structure molybdenum disulfide solar cell and preparation method thereof
  • Vertical multi-junction structure molybdenum disulfide solar cell and preparation method thereof

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Embodiment 1

[0036] Such as figure 1 and figure 2 As shown, the present invention provides a vertical multi-junction molybdenum disulfide solar cell structure, which includes three parts: a periodically repeated basic unit, doped regions on both sides and electrodes on both sides:

[0037] The basic units that repeat periodically include:

[0038] The base region (0) is a single-layer molybdenum disulfide material, which is an intrinsic semiconductor;

[0039] The first doped region (1) is a single-layer molybdenum disulfide material, and the first doped region (1) is made on one side of the base region (0), and its thickness is the same as that of the base region (0), which is P-type doping, doped with F atoms and O atoms;

[0040] The second doped region (2) is a single-layer molybdenum disulfide material, the second doped region (2) is made on the other side of the base region (0), and its thickness is the same as that of the base region (0), It is N-type doped, and the doped is P ...

Embodiment 2

[0056] Such as figure 1 and figure 2 As shown, the present invention provides a vertical multi-junction molybdenum disulfide solar cell structure, which includes three parts: a periodically repeated basic unit, doped regions on both sides and electrodes on both sides:

[0057] The basic units that repeat periodically include:

[0058] The base area (0) is a 10-layer molybdenum disulfide material, which is an intrinsic semiconductor;

[0059] The first doped region (1) is a 10-layer molybdenum disulfide material, and the first doped region (1) is made on one side of the base region (0), and its thickness is the same as that of the base region (0), which is P-type doping, doped with AuCl 3 ;

[0060] The second doped region (2) is 10 layers of molybdenum disulfide material, and the second doped region (2) is made on the other side of the base region (0), and its thickness is the same as that of the base region (0), It is N-type doped, and the doped is BV;

[0061] Adjacen...

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Abstract

A vertical multi-junction structure molybdenum disulfide solar cell comprises three parts of a periodically repeating basic unit, two side doped regions (a third doped region and a fourth doped region), and two side electrodes (a first electrode and a second electrode), wherein the basic unit is composed of a base region, a first doped region, and a second doped region; the base region and each doped region are single or multi-layered molybdenum disulfide materials having a thickness ranging from 1 to 100 layers; the first doped region and the third doped region have the same doping type beingN-type or P-type doping; the second doped region and the fourth doped region have the same doping type being N-type or P-type doping; and the doping type of the second doped region and the fourth doped region is opposite to that of the first doped region and the third doped region. The solar cell provided by the invention can reduce the amount of materials used, reduce the manufacturing cost, andreduce the electrical loss of the solar cell, thereby improving the conversion efficiency of the solar cell.

Description

technical field [0001] The invention belongs to the technical field of solar photovoltaic cells, and relates to a solar cell structure and a preparation method thereof, in particular to a vertical multi-junction molybdenum disulfide solar cell and a preparation method thereof. Background technique [0002] In recent years, problems such as environmental pollution and the greenhouse effect have become increasingly serious around the world, and traditional energy reserves have become less and less, and prices have become higher and higher. Therefore, human demand for clean energy is increasing. Solar photovoltaic power generation as a clean energy More and more attention has been paid. At present, most of the solar photovoltaic cells sold on the market are crystalline silicon solar cells, and the cost of power generation is still higher than that of traditional fossil energy sources. The absorption coefficient of silicon materials is low, and thicker cells are needed to achiev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/032H01L31/0352H01L31/0687H01L31/18
CPCH01L31/022425H01L31/032H01L31/03529H01L31/0687H01L31/18Y02E10/544Y02P70/50
Inventor 邢宇鹏张楷亮赵金石杨正春
Owner TIANJIN UNIVERSITY OF TECHNOLOGY