Method for manufacturing silicon wafer

Abstract

This method for manufacturing a silicon wafer includes: a growing step for growing, by means of a Czochralski method, a silicon single crystal not containing crystal-originated particles (COP) and dislocation clusters; an oxidation-induced stacking fault (OSF) evaluation step for evaluating the OSF occurrence status of an evaluation wafer obtained from the silicon single crystal; and a heat treatment step for performing, under the condition of 1,310 DEG C or higher, rapid thermal oxidation (RTO) treatment with respect to a silicon wafer obtained from the same silicon single crystal from whichthe evaluation wafer has been obtained, in the cases where the evaluation wafer has an OSF, and performing the RTO treatment under the condition below 1,310 DEG C with respect to the silicon wafer inthe cases where the evaluation wafer does not have the OSF.

Description

technical field [0001] The invention relates to a method for manufacturing a silicon wafer. Background technique [0002] A silicon wafer (hereinafter, sometimes referred to as "wafer") used as a substrate of a semiconductor device is usually cut out and polished from single crystal silicon grown by the Czochralski method (hereinafter, sometimes referred to as "CZ method") Wait for the process to manufacture. In crystals grown by the CZ method, crystal defects called native defects sometimes occur. [0003] figure 1 It is a longitudinal cross-sectional view of a pulled silicon single crystal and schematically shows an example of the relationship between defect distribution and V / G. V is the pulling speed of the single crystal silicon, and G is the temperature gradient in the growth direction of the single crystal silicon immediately after pulling. [0004] The temperature gradient G is considered to be substantially constant from the thermal characteristics of the therma...

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Problems solved by technology

[0013] However, the potential RIE defects in the wafer are generated when heat treatment is performed under specific conditions, but the impact on the yield of the device cannot be ignored

For example, when OSF is formed on the surface of the wafer, it becomes a cause of leakage current and degrades device characteristics

And, if P V Oxygen precipitation nuclei in the region generate oxygen precipitation during heat treatment in the device manufacturing process, and cause the oxygen precipitation to remain in the active layer of the device component, which may cause leakage current in the device

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