LED chip, LED epitaxial wafer with vertical structure and preparation method thereof

Abstract

The invention discloses an LED chip, an LED epitaxial wafer of a vertical structure and a preparation method thereof. The preparation method includes the following steps that: a GaN nucleation layer is grown on the surface of a cleaned metal substrate, and a P type GaN layer is grown on the surface of the GaN nucleation layer; a GaN barrier layer is grown on the surface of the P type GaN layer, and a multi-quantum well layer is grown on the surface of the GaN barrier layer; and an N type GaN layer is grown on the multi-quantum well layer, and therefore, the LED epitaxial wafer of the verticalstructure can be obtained. According to the LED chip, the LED epitaxial wafer of the vertical structure and the preparation method thereof provided by the technical schemes of the invention, the GaN nucleation layer, the P type GaN layer, the GaN barrier layer, the multi-quantum well layer, and the N type GaN layer are sequentially grown directly on the metal substrate, so that the LED epitaxial wafer of the vertical structure can be obtained; and therefore, the peeling and bonding of the substrate of the LED epitaxial wafer are not required, the preparation efficiency of the LED epitaxial wafer can be improved, and the yield and internal quantum efficiency of the finally prepared LED epitaxial wafer can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and more specifically relates to an LED chip, a vertical LED epitaxial wafer and a preparation method thereof. Background technique [0002] LED (Light Emiting Diode, light-emitting diode) chips are divided into front-mounted structure, flip-chip structure and vertical structure. Among them, LED chips with vertical structure have high thermal resistance, good heat dissipation, and can avoid current crowding. Widespread concern. [0003] At present, when making a vertical structure, it is necessary to peel off the original substrate (usually a sapphire substrate) used in the preparation of the LED epitaxial wafer, and then bond a metal substrate on the LED epitaxial wafer. Among them, the commonly used peeling methods are chemical etching or laser peeling, while bonding needs to be carried out under high pressure, or high temperature and high pressure conditions. However, because the stri...

AI Technical Summary

Problems solved by technology

However, because the stripping takes a long time, the preparation efficiency of the LED epitaxial wafer will be reduced; the high-pressure environment required for bonding may cause the LED epitaxial wafer to be broken, so the prepared LED will be reduced. The yield rate of the epitaxial wafer, and the high temperature and high pressure environment will change the composition of the active area of ​​the LED epitaxial wafer, and will change the concentration and distribution of substances in the N-type layer and P-type layer, thereby reducing the LED Internal Quantum Efficiency of Epitaxial Wafer

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