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Device for catalytic degradation of organic contaminants by using Ga2O3 thin film

A technology for organic pollutants and catalytic degradation, which is applied in the field of devices for catalytic degradation of organic pollutants using Ga2O3 films, and can solve the problems of non-reusable, difficult to recycle, and limited promotion.

Inactive Publication Date: 2019-03-29
BEIJING UNIV OF TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, most of the research on semiconductor photocatalytic degradation of organic pollutants uses micro-nano-scale particle materials. This kind of material has a large specific surface area and high pollutant degradation efficiency, but it is difficult to recycle and cannot be reused. defects, which limit its promotion in practical applications

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  • Device for catalytic degradation of organic contaminants by using Ga2O3 thin film

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Embodiment Construction

[0014] The present invention will be described in detail below in conjunction with the accompanying drawings. However, the present invention is not limited to the following examples.

[0015] Because the present invention focuses on Ga 2 o 3 The innovation of the shape of the material to achieve the purpose of reuse, so the Ga 2 o 3 The control of the growth conditions of thin film materials can be determined according to the specific experimental conditions of each researcher.

[0016] (1) A 15mm×15mm quartz plate is used as Ga 2 o 3 For the substrate for thin film growth, the substrate was ultrasonically cleaned with acetone, ethanol, and deionized water in sequence, and then dried with a nitrogen gun for later use.

[0017] (2) Using radio frequency magnetron sputtering equipment to deposit a layer of Ga on the quartz substrate 2 o 3 film material. The pre-vacuum degree of the system is 5×10 -4 Pa. The film growth atmosphere is Ar, and the working pressure is 1.0...

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Abstract

The invention relates to a device for catalytic degradation of organic contaminants by using a Ga2O3 thin film, and belongs to the field of organic contaminant photocatalytic degradation by semiconductor materials. A clamp groove is formed in a container; a quartz substrate on which a layer of Ga2O3 thin film material is deposited is clamped in the clamp groove, so that the Ga2O3 thin film is repeatedly used for catalytically degrading the organic contaminants. A quartz sheet is used as the substrate for Ga2O3 thin film growth; the quartz substrate is subjected to ultrasonic cleaning; radio frequency magnetron sputtering equipment is used for depositing a layer of Ga2O3 thin film material on the quartz substrate; a tubular furnace is used for performing annealing treatment on the Ga2O3 thin film material; the quartz sheet on which the Ga2O3 thin film is attached is put into the clamp groove of the container; under the ultraviolet illumination, the organic contaminant degradation is performed. A layer of Ga2O3 thin film in nanometer scale dimension is deposited on the quartz substrate by a magnetron sputtering method; the clamp groove is formed in the container for completing the fixation of the quartz substrate; the repeated utilization of the Ga2O3 material is realized.

Description

technical field [0001] The present invention relates to a method using Ga 2 o 3 The invention relates to a thin-film catalytic degradation device for organic pollutants, which belongs to the field of semiconductor material photocatalytic degradation of organic pollutants. Background technique [0002] With the development of industry, more and more organic pollutants (for example: perfluorooctanoic acid, dimethyl titanate, etc.) are discharged into the natural environment, threatening human safety. In order to degrade various organic pollutants, researchers use various methods such as heat treatment, reduction degradation, photochemical degradation and semiconductor photocatalytic degradation to degrade organic pollutants. The semiconductor photocatalytic process has the advantages of being able to be carried out at room temperature, low cost, high efficiency, and environmental friendliness. Many scientific research institutions at home and abroad have carried out research...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/08B01J35/00B01J37/02A62D3/176A62D101/20
CPCA62D3/176B01J23/08B01J37/0215A62D2101/20B01J35/39
Inventor 邓金祥张浩杨倩倩李瑞东徐智洋孙俊杰
Owner BEIJING UNIV OF TECH