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Design method of high power emitter based on catastrophic topological state

A design method, high-power technology, applied in design optimization/simulation, calculation, special data processing applications, etc., can solve the problem that the dielectric constant cannot reach a certain frequency band

Active Publication Date: 2019-03-29
CHINA SHIP DEV & DESIGN CENT
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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a high-power radiation source design method based on sudden topological state mutations to realize high-power microwave radiation by using sudden topological state mutations for traditional materials. Radiation: On the basis of using low electron energy to achieve radiation, realize adjustable narrow-band high-power output, thereby forming a high-power central frequency adjustable radiation chip design and development

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  • Design method of high power emitter based on catastrophic topological state
  • Design method of high power emitter based on catastrophic topological state
  • Design method of high power emitter based on catastrophic topological state

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[0029] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0030] The core technical approach of the present invention is to design the radiation characteristics of the device by designing material components and thicknesses with different dielectric constants at specific frequencies to realize the state where the dispersion curve changes from "elliptic curve" to "hyperbolic" topological state. . respectively by figure 1 Zhongzheng's "elliptic curve type" is transformed into figure 2 In "Hyperbolic", figure 1 Negative "elliptic curve" transforms into figure 2 Middle "Hyperbolic". Based on this design idea, in view of the current lack of micro-high-frequency, high-power electromagnetic wave radiation devices, the design and development of high-power extreme ultraviolet radiation sources are carried ou...

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Abstract

A design method of a high power emitter based on a catastrophic topological state is disclosed. The composition and thickness of materials with different dielectric constants are designed by frequency, The output radiation characteristics of the device are designed at the topological mutation point of the material. The specific steps are as follows: S1, a radiation device structure supporting themutation topological state is designed, which is divided into three layers: graphene layer / boron nitride layer / metal aluminum layer, wherein the graphene layer is dielectric characteristic at the extreme ultraviolet ray, and the metal aluminum layer realizes the metal characteristic; S2, the thickness design of the radiation device structure; S3, the design of radiation field strength and electronflying distance. The direction of Cherenkov radiation wave vector of topological state mutation point is along the propagation direction, and the direction of energy flow of electromagnetic wave is perpendicular to the direction of wave vector, so that the maximum electron energy can be extracted. The invention realizes the high-power microwave radiation by utilizing the material topological state mutation; On the basis of using low electron energy to realize radiation, the high power output with adjustable narrow band is realized, and the design and development of the high power center frequency adjustable radiation chip is formed.

Description

technical field [0001] The invention relates to the field of high-power microwave device design, in particular to a high-power radiation source design method based on abrupt topological states. Background technique [0002] When charged particles pass through a dielectric at a certain speed threshold, the electromagnetic radiation emitted by the driving medium is called Cerenkov radiation. The generation of Cherenkov radiation requires the velocity of charged particles to exceed the phase velocity of electromagnetic waves in the medium. Conventional generation of Cerenkov radiation requires electron energies on the order of a few hundred keV. Radiation sources under such high-voltage requirements are difficult to meet the actual application conditions in terms of safety, cost and stability. [0003] In order to reduce the electron energy required to produce Cerenkov radiation, Marin Soljacic et al. of the Massachusetts Institute of Technology disclosed the use of high-orde...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/20
Inventor 肖龙陈俊峰陈亮张崎郭龙颖
Owner CHINA SHIP DEV & DESIGN CENT
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