Unlock instant, AI-driven research and patent intelligence for your innovation.

Laser epitaxial structure and manufacturing method

An epitaxial structure and manufacturing method technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problems affecting the characteristics of the laser epitaxy structure, high stress of the laser epitaxy structure, uneven oxide thickness, etc., to slow down the oxidation rate, reduce The effect of oxidation and improvement of properties

Active Publication Date: 2019-03-29
YANGZHOU CHANGELIGHT
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, at present, after the growth of the laser epitaxy structure is completed, the phenomenon of overoxygen often occurs during the oxidation process, and the oxidation thickness is uneven, so that the stress of the laser epitaxy structure is relatively large, thereby affecting the characteristics of the laser epitaxy structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laser epitaxial structure and manufacturing method
  • Laser epitaxial structure and manufacturing method
  • Laser epitaxial structure and manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0038] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0039] refer to figure 1 , figure 1 A schematic diagram of a laser epitaxial structure provided by an embodiment of the present invention, the laser epitaxial structure includes:

[0040] Substrate 101;

[0041...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a laser epitaxial structure and a manufacturing method. In the laser epitaxial structure, an Al<0.98>Ga<0.02>As layer and a DBR reflecting mirror layer connected therewith havehigher Al components. In the oxidation process, a certain degree of oxidation exists, so that the epitaxial structure cannot be oxidized through the first GaAs layer and the second GaAs layer, an interface is clearer, oxidation is more uniform, and the influence of non-uniform oxidation on stress is reduced, thereby improving the characteristics of the epitaxial structure. Moreover, by adding thefirst AlyGa1-yAs layer and a second AlyGa1-yAs (0.6<y<0.98), and the structure does not comprise an end point value, so that three chamfers in a trifurcate oxidation process and an oxidation process are formed, thereby facilitating the reduction of the oxidation rate and further reducing the oxidation of other DBR reflecting mirror layers.

Description

technical field [0001] The invention relates to the technical field of laser epitaxy, and more specifically, to a laser epitaxy structure and a manufacturing method. Background technique [0002] VCSEL (Vertical Cavity Surface Emitting Laser, Vertical Cavity Surface Emitting Laser), compared with other light sources such as LED (Light Emitting Diode, Light Emitting Diode) and LD (Laser Diode, Laser Diode), has small size, circular output spot and low price And other advantages, are widely used in optical communication, optical interconnection and optical storage and other fields. [0003] However, at present, after the laser epitaxy structure is grown, overoxygen often occurs during the oxidation process, and the oxidation thickness is uneven, so that the stress of the laser epitaxy structure is relatively large, thereby affecting the characteristics of the laser epitaxy structure. Contents of the invention [0004] In view of this, in order to solve the above-mentioned p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S5/183H01S5/343
CPCH01S5/18313H01S5/34353G06F12/0607G06F2212/1016
Inventor 田宇韩效亚吴真龙杜石磊
Owner YANGZHOU CHANGELIGHT