Preparation method for water solution thin film transistor

Abstract

The invention belongs to the technical field of semiconductor thin film transistor preparation, and relates to a preparation method for a water solution thin film transistor. Firstly, yttrium nitrate is dissolved in deionized water, and a zirconia precursor solution is formed by magnetic force mixing; then, the surface of a low resistance silicon base is cleaned, and is coated with the precursor solution in a rotation manner; a Y2O3 film sample is obtained through baking and low temperature annealing; zinc nitrate and indium nitrate are respectively dissolved in deionized water, and an IZO water solution is formed through mixing; the Y2O3 film surface is coated with the IZO water solution in a rotation manner, is subjected to solidification treatment and low temperature annealing, so that an IZO gutter channel layer is obtained; finally, the vacuum thermal evaporation technology is adopted to prepare a metal source and an electric leakage pole on the IZO gutter channel layer, and the water solution thin film transistor based on ultrathin Y2O3 and high K dielectric layer is obtained. The overall embodiment is low in price; the technology is simple, the principle is reliable, the product performance is good, the preparation is environment-friendly, and the application prospect is wide.

Description

Technical field: [0001] The invention belongs to the technical field of semiconductor thin film transistor preparation, and relates to a method for preparing thin film transistors based on aqueous solution, in particular to a method using indium zinc oxide (InZnO) as the channel layer and ultrathin yttrium oxide (Y 2 o 3 ) is a preparation process of a green environment-friendly thin film transistor based on an aqueous solution method for a high-k dielectric layer. Background technique: [0002] Currently, thin film transistors (Thin Film Transistor, TFT) play an important role in active matrix liquid crystal display devices (Active Matrix Liquid Crystal Display, AMLCD). From low-temperature amorphous silicon TFT to high-temperature polysilicon TFT, its technology is becoming more and more mature, and its application objects have also developed from only driving LCD (Liquid Crystal Display) to driving both LCD and OLED (Organic Light Emitting Display), and even electronics ...

AI Technical Summary

Problems solved by technology

[0004] At present, when using chemical solution technology to prepare thin films, organic solutions are mostly used as precursors. This method not only increases the cost of experiments, but also destroys the natural environment, which is not conducive to the purpose of sustainability and environmental protection; looking for a fully aqueous chemical solution method to prepare The new idea of ​​thin-film transistors, in the whole device preparation process, only metal nitrate and deionized water are used as reaction sources, and deionized water is used instead of traditional organic solutions (ethylene glycol methyl ether, etc.) as solvents to form a new type Aqueous solution, compared with conventional organic solutions, aqueous solution has the advantages of non-toxicity, environmental protection, and low cost, and is an urgent technical task to be solved in this industry; in addition, due to the electrostatic combination between solute cations and water molecules in aqueous solution, compared Covalent bonding in organic solutions has weaker binding energy, so films prepared by spin coating with aqueous solutions have lower decomposition temperatures, so the use of aqueous solutions to prepare thin film transistors with high reliability, good repeatability, and low temperature decomposition is positive. Become a technical topic for in-depth research in the industry and scientific research circles

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