Preparation method for water solution thin film transistor
A thin-film transistor and aqueous solution technology, applied in the manufacture of semiconductor/solid-state devices, nanotechnology for materials and surface science, semiconductor devices, etc., can solve problems such as unfavorable sustainability, green environmental protection, increased experiment costs, and damage to the natural environment , to achieve the effect of reducing the preparation cost, low cost, and avoiding high temperature impurity
Inactive Publication Date: 2014-12-10
QINGDAO UNIV
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Problems solved by technology
[0004] At present, when using chemical solution technology to prepare thin films, organic solutions are mostly used as precursors. This method not only increases the cost of experiments, but also destroys the natural environment, which is not conducive to the purpose of sustainability and environmental protection; looking for a fully aqueous chemical solution method to prepare The new idea of thin-film transistors, in the whole device preparation process, only metal nitrate and deionized water are used as reaction sources, and deionized water is used instead of traditional organic solutions (ethylene glycol methyl ether, etc.) as solvents to form a new type Aqueous solution, compared with convention
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[0022] Examples:
[0023] The yttrium nitrate, zinc nitrate and indium nitrate powders in this embodiment were all purchased from Aladdin Company, with a purity greater than 98%; the bottom grid structure was made of ultra-thin yttrium oxide (Y 2 O 3 ) Is a high-k dielectric layer and an aqueous thin film transistor based on an indium zinc oxide (IZO) film as the channel layer is prepared as follows:
[0024] (1)Using aqueous solution method to spin coating to prepare ultra-thin Y 2 O 3 High-k dielectric film:
[0025] Step 1: Use commercially purchased single-sided polished low-resistance silicon as the substrate (ρ<0.0015Ω·cm) and gate electrode. The low-resistance silicon substrate is washed with hydrofluoric acid, acetone, and alcohol ultrasonically for 10 minutes each. After repeated washing with deionized water, blow dry with high-purity nitrogen;
[0026] Step 2: Dissolve yttrium nitrate in the mixed solution according to 0.2M, weigh 10 mL of deionized water, weigh out 0.76 g o...
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Abstract
The invention belongs to the technical field of semiconductor thin film transistor preparation, and relates to a preparation method for a water solution thin film transistor. Firstly, yttrium nitrate is dissolved in deionized water, and a zirconia precursor solution is formed by magnetic force mixing; then, the surface of a low resistance silicon base is cleaned, and is coated with the precursor solution in a rotation manner; a Y2O3 film sample is obtained through baking and low temperature annealing; zinc nitrate and indium nitrate are respectively dissolved in deionized water, and an IZO water solution is formed through mixing; the Y2O3 film surface is coated with the IZO water solution in a rotation manner, is subjected to solidification treatment and low temperature annealing, so that an IZO gutter channel layer is obtained; finally, the vacuum thermal evaporation technology is adopted to prepare a metal source and an electric leakage pole on the IZO gutter channel layer, and the water solution thin film transistor based on ultrathin Y2O3 and high K dielectric layer is obtained. The overall embodiment is low in price; the technology is simple, the principle is reliable, the product performance is good, the preparation is environment-friendly, and the application prospect is wide.
Description
Technical field: [0001] The invention belongs to the technical field of semiconductor thin film transistor preparation, and relates to a method for preparing thin film transistors based on aqueous solution, in particular to a method using indium zinc oxide (InZnO) as the channel layer and ultrathin yttrium oxide (Y 2 o 3 ) is a preparation process of a green environment-friendly thin film transistor based on an aqueous solution method for a high-k dielectric layer. Background technique: [0002] Currently, thin film transistors (Thin Film Transistor, TFT) play an important role in active matrix liquid crystal display devices (Active Matrix Liquid Crystal Display, AMLCD). From low-temperature amorphous silicon TFT to high-temperature polysilicon TFT, its technology is becoming more and more mature, and its application objects have also developed from only driving LCD (Liquid Crystal Display) to driving both LCD and OLED (Organic Light Emitting Display), and even electronics ...
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Patent Timeline
Login to view more IPC IPC(8): H01L21/336H01L21/20
CPCH01L29/66969B82Y30/00H01L21/0206H01L21/02192H01L21/02282H01L21/02296H01L21/02565H01L21/02628
Inventor 刘国侠刘奥单福凯朱慧慧
Owner QINGDAO UNIV
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