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Chemical mechanical polishing apparatus having wiper fixture

A fixed device, chemical mechanical technology, applied in the direction of grinding/polishing equipment, grinding equipment, metal processing equipment, etc., can solve the problem of not being able to obtain planarization

Inactive Publication Date: 2019-04-02
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Mechanical grinding alone causes too much surface damage, and wet etching alone does not achieve good planarization

Method used

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  • Chemical mechanical polishing apparatus having wiper fixture
  • Chemical mechanical polishing apparatus having wiper fixture
  • Chemical mechanical polishing apparatus having wiper fixture

Examples

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Embodiment Construction

[0017] While specific configurations and arrangements are discussed, it should be understood that this is done for illustration purposes only. A person skilled in the relevant art will recognize that other configurations and arrangements may be used without departing from the spirit and scope of the present disclosure. It will be apparent to those skilled in the relevant art that the present disclosure can also be used in various other applications.

[0018] It should be noted that references in the specification to "one embodiment," "an embodiment," "exemplary embodiment," "some embodiments," etc. indicate that the described embodiments may include a particular feature, structure, or characteristic, But each embodiment may not necessarily include that particular feature, structure or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Furthermore, when a particular feature, structure or characteristic is described in conjunction with...

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PUM

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Abstract

Embodiments of apparatus and methods for chemical mechanical polishing (CMP) are disclosed. In an example, an apparatus for CMP includes a platen, a slurry supply source, and at least one wiper fixture. The platen is configured to rotate the central axis of the pad on it. The slurry supply source is configured to supply the slurry to the pad as the pad rotates. The at least one wiper fixture is configured to scrape the slurry from the pad as the slurry travels in a circumferential direction of the pad as the pad rotates a distance between the slurry supply source and the at least one wiper fixture.

Description

technical field [0001] Embodiments of the present disclosure relate to semiconductor device manufacturing equipment and methods of using the same. Background technique [0002] Chemical mechanical polishing (CMP, also known as "chemical mechanical planarization") is the process of smoothing the surface of a wafer through a combination of chemical etching and free abrasive mechanical polishing. Mechanical grinding alone can cause excessive surface damage, and wet etching alone cannot achieve good planarization. Most chemical reactions are isotropic and etch different crystal planes at different rates. CMP involves two processes simultaneously. [0003] In semiconductor manufacturing, the CMP process is used to planarize oxide, polysilicon or metal layers (e.g., copper, aluminum, tungsten, etc.) in order to prepare them for subsequent photolithography steps, avoiding deep focus during illumination of photosensitive layers question. This is the preferred planarization step ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/10B24B37/34B24B57/02B24B53/017
CPCB24B37/107B24B37/34B24B53/017B24B57/02B24B37/32B24B37/20H01L21/67092
Inventor 高林蒋阳波王光毅杨俊铖
Owner YANGTZE MEMORY TECH CO LTD