Inorganic thermoelectric device having room temperature flexibility and preparation method thereof
A room temperature flexible, thermoelectric device technology, applied in the manufacture/processing of thermoelectric devices, thermoelectric device components, thermoelectric device node lead-out materials, etc., can solve the problem of low performance of pure organic thermoelectric materials, low power generation and refrigeration efficiency , can not meet the actual needs and other problems, and achieve the effect of simple preparation method, improved performance and suitable for popularization and application
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Embodiment 1
[0035] An inorganic thermoelectric device with room temperature flexibility, which includes from bottom to top: a lower substrate 1-1, an electrode 2, an anti-diffusion layer 3, and a p-type thermoelectric bulk material 4-1 with room temperature flexibility (p-Cu 2 Se) or an n-type thermoelectric bulk material with room temperature flexibility 4-2 (n-Ag 2 Se), the anti-diffusion layer 3 and the upper substrate 1-2; wherein, the opposite side of the lower substrate 1-1 and the upper substrate 1-2 are respectively provided with several electrodes 2 according to the circuit requirements, and the other side of each electrode 2 is connected with the chamber Soft and flexible thermoelectric bulk materials (p-type thermoelectric bulk material 4-1 and room temperature flexible n-type thermoelectric bulk material 4-2) are fixedly connected, and anti-diffusion is set between the contact surface of electrode 2 and thermoelectric bulk material Layer 3, the p-type thermoelectric material 4...
Embodiment 2
[0054] An inorganic thermoelectric device with room temperature flexibility, the structure of which is roughly the same as that of Example 1, except that the thermoelectric bulk materials used are p-type thermoelectric bulk materials with room temperature flexibility and n-type thermoelectric bulk materials with room temperature flexibility. type thermoelectric block material, the specific preparation method includes the following steps:
[0055] 1) Evaporate metal Cu thin film electrodes on 0.4mm thick glass fiber cloth, the specific parameters are as follows: the vacuum degree is 1×10 - 4 Pa, evaporation current 80A, substrate rotation speed 30r / min, the thickness of Cu thin film electrode on the substrate is about 120μm after 3min;
[0056] 2) On the ZPG-400A arc spraying machine, the size is Φ20×0.5mm 3 p-Ag 5 Te 3 and n-Ag 2 The upper and lower surfaces of Te dense block material are sprayed with a layer of anti-diffusion layer Mo, specifically: use Mo wire with a di...
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