Inorganic thermoelectric device having room temperature flexibility and preparation method thereof

A room temperature flexible, thermoelectric device technology, applied in the manufacture/processing of thermoelectric devices, thermoelectric device components, thermoelectric device node lead-out materials, etc., can solve the problem of low performance of pure organic thermoelectric materials, low power generation and refrigeration efficiency , can not meet the actual needs and other problems, and achieve the effect of simple preparation method, improved performance and suitable for popularization and application

Active Publication Date: 2019-04-05
WUHAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] For thermoelectric devices, the performance of pure organic thermoelectric materials is low. Although the thermoelectric devices prepared by using them have good flexibility, the power generation and cooling efficiency is not high, which cannot meet the actual needs.
On the other hand, although inorganic thermoelectric materials have better thermoelectric properties than organic thermoelectric materials, they are usually brittle at room temperature. Although they can be used in conjunction with flexible substrates to build macroscopically "flexible" devices, each thermoelectric unit It is still rigid, and it is extremely vulnerable to damage by external forces or internal stress during actual use

Method used

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  • Inorganic thermoelectric device having room temperature flexibility and preparation method thereof

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Embodiment 1

[0035] An inorganic thermoelectric device with room temperature flexibility, which includes from bottom to top: a lower substrate 1-1, an electrode 2, an anti-diffusion layer 3, and a p-type thermoelectric bulk material 4-1 with room temperature flexibility (p-Cu 2 Se) or an n-type thermoelectric bulk material with room temperature flexibility 4-2 (n-Ag 2 Se), the anti-diffusion layer 3 and the upper substrate 1-2; wherein, the opposite side of the lower substrate 1-1 and the upper substrate 1-2 are respectively provided with several electrodes 2 according to the circuit requirements, and the other side of each electrode 2 is connected with the chamber Soft and flexible thermoelectric bulk materials (p-type thermoelectric bulk material 4-1 and room temperature flexible n-type thermoelectric bulk material 4-2) are fixedly connected, and anti-diffusion is set between the contact surface of electrode 2 and thermoelectric bulk material Layer 3, the p-type thermoelectric material 4...

Embodiment 2

[0054] An inorganic thermoelectric device with room temperature flexibility, the structure of which is roughly the same as that of Example 1, except that the thermoelectric bulk materials used are p-type thermoelectric bulk materials with room temperature flexibility and n-type thermoelectric bulk materials with room temperature flexibility. type thermoelectric block material, the specific preparation method includes the following steps:

[0055] 1) Evaporate metal Cu thin film electrodes on 0.4mm thick glass fiber cloth, the specific parameters are as follows: the vacuum degree is 1×10 - 4 Pa, evaporation current 80A, substrate rotation speed 30r / min, the thickness of Cu thin film electrode on the substrate is about 120μm after 3min;

[0056] 2) On the ZPG-400A arc spraying machine, the size is Φ20×0.5mm 3 p-Ag 5 Te 3 and n-Ag 2 The upper and lower surfaces of Te dense block material are sprayed with a layer of anti-diffusion layer Mo, specifically: use Mo wire with a di...

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Abstract

The present invention discloses an inorganic thermoelectric device having room temperature flexibility for the first time. The inorganic thermoelectric device comprises an upper substrate, a lower substrate, an electrode, an anti-diffusion layer, and a thermoelectric bulk material having room temperature flexibility, wherein the upper substrate, the lower substrate, the electrode, and the anti-diffusion layer are all flexible inorganic materials. The inorganic thermoelectric bulk material having room temperature flexibility is used for preparing the thermoelectric device, and can take accountof both the thermoelectric performance and the flexibility of the thermoelectric device. The preparation method of the thermoelectric material is simple, achieves the construction of the p/n thermoelectric material, can further improve the performance of the obtained thermoelectric devices, and has important research and promotion significance.

Description

technical field [0001] The invention belongs to the field of thermoelectric material science and technology, and specifically relates to an inorganic thermoelectric device with room temperature flexibility and a preparation method thereof. Background technique [0002] Compared with traditional electronic devices, flexible electronic devices have completely different mechanical properties, including foldability, stretchability, bendability, etc., which have caused major changes in many fields such as electronic devices, optoelectronic devices, biomedicine, and energy storage. . Because the deformation stress of metals, alloys and organic materials can reach 5-100%, and the hard and brittle inorganic semiconductor materials are often only 0.1-0.2% due to the intrinsic characteristics of the crystal structure, and rarely exceed 1%. Flexible electronic devices usually fabricate organic / inorganic material electronics on flexible / ductile plastic or thin metal substrates. [000...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16H01L35/18H01L35/32H01L35/34H01L35/02
CPCH10N10/80H10N10/853H10N10/852H10N10/01H10N10/17
Inventor 唐新峰杨东旺唐昊黎俊唐可琛鄢永高
Owner WUHAN UNIV OF TECH
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