Disorder Engineering Semiconductor Nanomaterial Preparation System

Abstract

The invention provides a disordered engineering semiconductor nanomaterial preparation system. The disordered engineering semiconductor nanomaterial preparation system comprises a laser generating device, a light splitting mechanism, N lenses, N target material seats and a base piece structure, wherein the laser generating device is used for emitting laser of preset size; the light splitting mechanism is used for performing light splitting on the laser to form N bundles of subsidiary laser, and the N is a natural number which is larger than 1; the N lenses are located on light paths of the N bundles of subsidiary laser correspondingly to be used for performing light focusing on the corresponding subsidiary laser correspondingly; the N target material seats are distributed along a preset spherical surface, located on the light paths of the N bundles of subsidiary laser correspondingly and used for bearing different target materials, and each lens is used for focusing the corresponding subsidiary laser to the corresponding target material seat and evaporating the target material on the corresponding target material seat to from a plume; and the base piece structure is located above the N target material seats and used for the N plumes to deposit and form a nanoparticle layer on the base piece structure after interaction.

Description

technical field [0001] The invention relates to the field of nanomaterial preparation, in particular to a disorder engineering semiconductor nanomaterial preparation system. Background technique [0002] Disorder engineering is to control the disordered-ordered structure of the semiconductor material lattice at the nanoscale to realize the modulation of the electronic energy band of the semiconductor material, as well as the optimization of electrical, optical, and chemical properties. Generally, disordered engineered semiconductor nanomaterials are oxide semiconductor materials prepared by chemical synthesis of high-temperature hydrogenation. Nanoparticles are first prepared by chemical methods, and then high-temperature hydrogenation is carried out in a tube furnace. The tube furnace is small in size, and the samples for each experiment can only be a small amount; and because hydrogen is easy to explode, it takes time for the experimenter. be safe. [0003] The use of ch...

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Problems solved by technology

[0004] First, it takes a long time to prepare disordered-ordered nanomaterial structures by chemical methods

[0005] Second, when preparing semiconductor nanomaterials by chemical methods, precursors are required, which limits the application of some semiconductor materials in disordering

[0006] Third, chemical methods are difficult to control the proportion of disordered and ordered nanomaterials

[0007] Fourth, the disordering of nanomaterials prepared by general chemical methods needs to be carried out in a tube furnace, which greatly increases the cost of the experiment, and the yield is very low

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