Photodetection method, system and device based on silicon-based germanium photodetector
A photodetector, silicon-based technology, applied in the field of photodetectors, can solve the problems of uneven distribution of optical power, reduce the saturation characteristics of devices, reduce the bandwidth of photodetectors, etc., and achieve the effect of low cost
Active Publication Date: 2020-04-03
SANMING UNIV
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Problems solved by technology
Carrier screening effect reduces photodetector bandwidth
In addition, the non-uniform distribution of optical power of the photodetector with the conventional incident structure will reduce the saturation characteristics of the device
Method used
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[0033] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments. In particular, the following examples are only used to illustrate the present invention, but not to limit the scope of the present invention. Likewise, the following embodiments are only some but not all embodiments of the present invention, and all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0034] The invention provides a silicon-based germanium photodetector, which can realize that the silicon-based germanium photodetector can couple two beams of light after power splitting of the incident light, so that the two beams of light show a mutual intensity after being coupled separately. The situation of superposition makes the light field distribution in the silicon-based germanium photodetector more uniform, and improves the bandwidth, sat...
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The invention discloses a photoelectric detection method and system of a silicon-based germanium photoelectric detector and equipment. The silicon-based germanium photoelectric detector comprises a light waveguide layer, a silicon oxide layer, a germanium oxide layer, a first electrode, a second electrode and a third electrode, wherein an electric field formed between the first electrode and the second electrode is used for coupling a beam of light of a first coupling region, an electric field formed between the third electrode and the second electrode is used for coupling another one beam oflight of a second coupling region, so that the two beams of light shows a situation of strong and weak superposition after coupling. By the mode, the two beams of light of incident light can be coupled by the silicon-based germanium photoelectric detector after power beam split, so that the two beams of light shows the situation of strong and weak superposition after coupling, light field distribution in the silicon-based germanium photoelectric detector is more uniform, and the bandwidth, the saturation characteristic and the reliability of the silicon-based germanium photoelectric detector are improved.
Description
technical field [0001] The invention relates to the technical field of photodetectors, in particular to a photodetection method, system and equipment based on silicon-based germanium photodetectors. Background technique [0002] In recent years, with the rapid development of the Internet of Things, the optical fiber communication system, as an important support of the Internet of Things, has received more attention. In the field of long-distance backbone networks, with the maturity and development of optical transmission technology, there has been an upsurge in the construction of backbone transmission networks worldwide, and the transmission bandwidth and transmission capacity have developed rapidly. [0003] With the development of optical fiber communication systems, the development of optical devices is also facing opportunities and challenges. How to develop optical devices with excellent performance and low price has become the primary problem that people face. Silico...
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IPC IPC(8): H01L31/0232H01L31/0224H01L31/0352H01L31/103
CPCH01L31/022408H01L31/02327H01L31/035281H01L31/1037
Inventor 崔积适刘持标邱锦明陈洪敏
Owner SANMING UNIV