Novel photoelectric detector
A photodetector and a new type of technology, applied in the field of photodetectors, can solve the problems of saturation current, difficulty in further improving bandwidth responsivity, and limitation of performance improvement, and achieve overall performance improvement, overall performance improvement, and large saturation current. Effect
Active Publication Date: 2020-09-15
SANMING UNIV
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Problems solved by technology
[0002] In the actual application process of existing photodetectors, its saturation current, bandwidth, and responsivity are difficult to further improve, which has formed certain restrictions on the performance of photodetectors. For the entire optical fiber communication system, the improvement of its working performance also subject to certain limitations
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Embodiment
[0032] Please refer to figure 1 , the present embodiment provides a novel photodetector 1000, the novel photodetector 1000 includes: a light guiding part 100, a light absorbing section 200, a p-type semiconductor 300, an n-type semiconductor 400, a first electrode 500, a second electrode 600 and a first electrode 500 Three electrodes 700 .
[0033] The light guide part 100 is disposed between the p-type semiconductor 300 and the n-type semiconductor 400 , and the light absorption section 200 is bonded to the light guide part 100 and arranged along the light path direction of the light guide part 100 . The first electrode 500 is conductively connected to the p-type semiconductor 300 , the second electrode 600 is conductively connected to the n-type semiconductor 400 , and the third electrode 700 is conductively connected to the light absorbing segment 200 . The light absorbing section 200 is made of photoelectric effect material.
[0034] Along the direction of the light path...
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The invention provides a novel photoelectric detector, and relates to the field of photoelectric detectors. The photoelectric detector comprises a light guide part, a light absorption section, a p-type semiconductor, an n-type semiconductor, a first electrode, a second electrode and a third electrode. The light guide part is arranged between the p-type semiconductor and the n-type semiconductor, and the light absorption section is attached to the light guide part and arranged in the light path direction of the light guide part. The first electrode is conductively connected to the p-type semiconductor, the second electrode is conductively connected to the n-type semiconductor, and the third electrode is conductively connected to the light absorption section. And the light absorption sectionis made of a photoelectric effect material. In the light path direction, the length of the light absorption section is (0.9n-0.5)-(1.1 n-0.5) times of the evanescent wave coupling period. The structure is simple, larger saturation current, higher bandwidth and higher responsivity are achieved, the overall performance is obviously improved, and positive significance is achieved for further improving the overall working performance of an optical fiber communication system.
Description
technical field [0001] The invention relates to the field of photodetectors, in particular to a novel photodetector. Background technique [0002] In the actual application process of existing photodetectors, its saturation current, bandwidth, and responsivity are difficult to further improve, which has formed certain restrictions on the performance of photodetectors. For the entire optical fiber communication system, the improvement of its working performance also subject to certain limitations. [0003] In view of this, this application is proposed. Contents of the invention [0004] The purpose of the present invention is to provide a new type of photodetector with simple structure, larger saturation current, higher bandwidth and higher responsivity, and the overall performance has been significantly improved, which is useful for further improving the overall performance of the optical fiber communication system. Work performance is positive. [0005] Embodiments of ...
Claims
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IPC IPC(8): H01L31/0352H01L31/0224H01L31/103
CPCH01L31/035272H01L31/022408H01L31/103
Inventor 崔积适
Owner SANMING UNIV