Unlock instant, AI-driven research and patent intelligence for your innovation.

Gallium oxide Schottky detector of PEDOT:PSS transparent electrode

A technology of transparent electrode and gallium oxide, applied in the field of detection, can solve the problems of influence of detection rate, decreased light transmittance, poor electrical conductivity, etc., and achieve the effect of avoiding poor light transmittance, improving detection rate, and high sensitivity

Inactive Publication Date: 2019-04-16
北京北达智汇微构分析测试中心有限公司
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Traditional Schottky-type devices mainly use semi-transparent metals, but usually the semi-transparent metal Ni / Au (2nm / 2nm) in Schottky contact has a light transmittance of only 60% at 300nm, which has a serious impact on the detection rate, and Studies have shown that for every 1nm increase in metal thickness, the light transmittance decreases by 10%.
In addition, due to lightly doped Ga 2 o 3 The carrier concentration of the material itself is not high, and the conductivity is not good. The existing electrode adopts the method of metal electrode. Due to the poor light transmission of the metal, the detection performance of the detector for weak light will not be high.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gallium oxide Schottky detector of PEDOT:PSS transparent electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0020] The embodiment of the present invention discloses a gallium oxide Schottky detector with a PEDOT:PSS transparent electrode. The PEDOT:PSS transparent electrode is used to replace the metal electrode, which avoids the disadvantage of poor light transmission of the metal electrode, and has high sensitivity. The detection rate is greatly improved.

[0021] Please refer to the attached figure 1 , a gallium oxide Schottky detector with a PEDOT:PSS transpare...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a gallium oxide Schottky detector of a PEDOT:PSS transparent electrode. The gallium oxide Schottky detector comprises an ohmic contactor, a Schottky contactor and a Ga2O3 material layer. Ultraviolet ray can be detected by matching of PEDOT:PSS, the gallium oxide Schottky detector is used for substituting an existing metal layer and is simple in design and wide in application, the defect of poor transmittance of the metal electrode is prevented, meanwhile, the weak light detection rate is greatly improved, and the gallium oxide Schottky detector has market promotion andapplication value.

Description

technical field [0001] The invention relates to the technical field of detection, in particular to a gallium oxide Schottky detector with a PEDOT:PSS transparent electrode. Background technique [0002] With the rapid development of the ultraviolet sterilization and disinfection market, the supporting ultraviolet detectors are also in urgent need of development. The types of detectors include photoconductive type, PN junction type, PIN type, Schottky junction type, MSM type, and heterojunction type. Schottky ultraviolet detectors are highly valued because of their high responsivity, fast response speed, simple process, and large photosensitive area. The Schottky type ultraviolet detector works by utilizing the Schottky junction formed by semi-transparent metal and GaN semiconductor. Since the semitransparent metal and GaN form a Schottky junction, the energy band of the semiconductor is bent in the area close to the metal. When ultraviolet light irradiates the semiconducto...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/108H01L31/0224H01L31/18H01L31/032
CPCH01L31/022466H01L31/0321H01L31/108H01L31/1884Y02P70/50
Inventor 魏伟
Owner 北京北达智汇微构分析测试中心有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com