Power Devices and Appliances

Abstract

The invention discloses a power device and an electric appliance. The power device comprises an SS input end, a first upper bridge arm switching tube, a second upper bridge arm switching tube, a thirdupper bridge arm switching tube, a first lower bridge arm switching tube, a second lower bridge arm switching tube, a third lower bridge arm switching tube, an UH driving circuit, a VH driving circuit, a WH driving circuit, a UL driving circuit, a VL driving circuit and a WL driving circuit. The UH driving circuit, the VH driving circuit and the WH driving circuit are connected with the SS inputend and are used for respectively driving the first upper bridge arm switching tube, the second upper bridge arm switching tube and the third upper bridge arm switching tube. The UH driving circuit isconnected with the first upper bridge arm switching tube. The VH driving circuit is connected with the second upper bridge arm switching tube. The WH driving circuit is connected with the third upperbridge arm switching tube. The UL driving circuit, the VL driving circuit and the WL driving circuit are connected with the SS input end and are used for respectively driving the first lower bridge arm switching tube, the second lower bridge arm switching tube and the third lower bridge arm switching tube. The UL driving circuit is connected with the first lower bridge arm switching tube. The VLdriving circuit is connected with the second lower bridge arm switching tube. The WL driving circuit is connected with the third lower bridge arm switching tube. According to the power device of the invention, the adaptability of a silicon intelligent power module and a silicon carbide intelligent power module can be improved. The performance of the silicon intelligent power module and the performance of the silicon carbide intelligent power module are brought into play.

Description

technical field [0001] The invention relates to the technical field of electric appliances, in particular to a power device and an electric appliance with the power device. Background technique [0002] Intelligent Power Module, or IPM (Intelligent Power Module), is a power drive product (power device) that combines power electronics and integrated circuit technology. The intelligent power module integrates power switching devices (such as SiC (silicon carbide) devices or Si (silicon) devices) and high-voltage integrated circuits, and has built-in fault detection circuits such as overvoltage, overcurrent and overheating. On the one hand, the intelligent power module receives the control signal from the MCU (Micro Controller Unit, micro control unit) to drive the subsequent circuit to work, and on the other hand, it sends the system status detection signal back to the MCU. Compared with traditional discrete solutions, intelligent power modules have won an increasing market d...

AI Technical Summary

Problems solved by technology

Replacing Si devices with SiC devices is an effective way to reduce the power consumption of intelligent power modules, but it also brings new problems because the threshold voltages of SiC devices and Si devices are different. Generally speaking, the threshold voltage of SiC devices is higher than that of Si devices. If Si devices are driven by the same high-voltage integrated circuit, the conduction process of SiC devices will inevitably be incomplete, and the advantages of SiC's low power consumption will not be brought into play, or even have the opposite effect. However, if different high-voltage Driving by integrated circuits will cause difficulties in material organization in the production process, and there will be risks of mixing materials, which will also increase the cost of intelligent power modules accordingly. Moreover, if the high-voltage integrated circuits that drive SiC devices use higher voltages for power supply , will also inevitably lead to an increase in the power consumption of the entire intelligent power module, offsetting the power reduction of the SiC device, reducing the effect of reducing power consumption of the intelligent power module using the SiC device, and if a higher voltage is used to drive the high voltage of the SiC device In order to supply power to integrated circuits, it is necessary to modify the peripheral electronic control scheme, which undoubtedly increases the resistance to intelligent power modules equipped with SiC devices.

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