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Method for monitoring focal length variation of online products by utilizing SCD

A focal length and product technology, which is applied in the field of using SCD to monitor the focal length change of online products, can solve the problems of lack of effective monitoring of focal length, large measurement variability, etc., to improve field focus, light source dose, and optimal critical size uniformity Effect

Inactive Publication Date: 2019-04-19
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The above three wafer matrices lack effective monitoring methods for the focal length of online products, and the traditional CDSEM (scanning electron microscope to measure critical dimension) measurement variability is too large

Method used

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  • Method for monitoring focal length variation of online products by utilizing SCD
  • Method for monitoring focal length variation of online products by utilizing SCD

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Embodiment Construction

[0019] combine figure 1 As shown, in order to demonstrate the ability of SRM, an advanced lithography step level is designed below, that is, an experiment using separate light source energy and focus to make photoresist topography with different contours, and prepare four FEM wafers (at least Four, not less than four) and five (at least five, not less than five) POR (process of Reference, process reference test piece) wafers, and measure the critical dimension by scatterometry.

[0020] The SRM parameters have been trained by the CDSEM of 4 FEM wafers, and achieved an excellent R2 (statistical coefficient of determination), which is used in statistics to measure the proportion of the variation of the dependent variable that can be explained by the independent variable. This is used to judge the accuracy of the statistical model (closer to 1 is better) and linear slope (0.98 and 1.1 respectively). see figure 2 Shown, wherein, R2=0.9814, linear slope Y=1.1072X-5.9777. figur...

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Abstract

The invention discloses a method for monitoring focal length variation of online products by utilizing an SCD. The method comprises the steps of: automatically and finely tuning online manufacturing process parameters by utilizing an SRM measurement result; and listing an average error of a wafer focus and a light source dose, thus field domain focuses and light source doses on a wafer can be improved once a scanner receives the listed average error calibration. The method can improve the field domain focuses and the light source doses on the wafer, and improve the uniformity of critical dimensions of the wafer.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for monitoring focal length changes of online products by using SCD (scattering measurement critical dimension). Background technique [0002] Currently, the frequently used wafer matrices include the following three types: [0003] 1. Focus matrix (Focus matrix, FM); [0004] 2. Energy matrix (Energy matrix, EM); [0005] 3. Focus / Energy matrix (FEM). [0006] The above-mentioned three types of wafer arrays all lack effective methods for monitoring the focal length of products on the line, and the traditional CDSEM (scanning electron microscope to measure critical dimension) measurement variability is too large. [0007] Due to the continuous demand for process miniaturization of various components, lithography technology plays a key role in today's semiconductor industry; in order to produce the best line resolution, the scanner must pre...

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Application Information

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IPC IPC(8): G03F7/20
CPCG03F7/7085
Inventor 杨然富赵珂
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD