Thin film transistor, thin film transistor manufacturing method and display device

Abstract

The invention provides a thin film transistor, a thin film transistor manufacturing method and a display device, and a display device for improving the electrical performance of the thin film transistor. The thin film transistor includes an active layer including a source and drain contact region and a channel region, a metal barrier layer covering the source and drain contact region, a first gateinsulation layer covering at least the channel region and exposing the metal barrier layer; a gate located on the first gate insulation layer and covering the channel region; an intermediate insulation layer over the gate and provided with a through hole for exposing the metal barrier layer; a source and drain electrode located on the intermediate insulation layer and in contact with the metal barrier layer through the through hole.

Description

technical field [0001] The present application relates to the field of display technology, and in particular to a thin film transistor, a manufacturing method of the thin film transistor, and a display device. Background technique [0002] A thin film transistor (Thin Film Transistor, TFT) is used to drive a light emitting unit in a display device to emit light. TFTs include top-gate thin film transistors and bottom-gate thin film transistors. The top-gate thin film transistor includes a substrate, a buffer layer, an active layer, a gate, a gate insulating layer, an intermediate insulating layer (Inner Layer Dielectric Layer, ILD) from bottom to top, and also includes a channel region in the active layer. and the source and drain on the intermediate insulating layer. In the process of forming the drain and source of the top-gate thin film transistor, the intermediate insulating layer can be etched by a dry etching process to form a deep hole, so that the source and drain ar...

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Problems solved by technology

However, the existence of this etching barrier layer will reduce the contact area between the source and drain electrodes and the active layer, resulting in an increase in the contact resistance between the source and drain electrodes and the active layer, thereby affecting the electrical performance of the thin film transistor.

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