Auxiliary scattering panel and its manufacturing method and display device
A manufacturing method and technology of a display device, which are applied in the directions of instruments, nonlinear optics, optics, etc., can solve the problems of inability to transmit signals to the transparent electrode layer 16 , the transparent electrode layer 16 is prone to breakage, and the display effect cannot be achieved, so as to reduce the breakage. risk, avoid undercut problems, and reduce production costs
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no. 1 example
[0052] The manufacturing method of the auxiliary scattering panel provided in the first embodiment of the present invention includes the following steps:
[0053] Please refer to Figure 3a , firstly provide the base substrate 21, and then form the metal circuit layer 22 on the base substrate 21. Specifically, the manufacture of the metal circuit layer 22 can be performed by first depositing a metal layer on the base substrate 21, and then forming the metal circuit layer 22 on the base substrate 21. A wet etching process is performed to form the metal circuit layer 22 , and the material of the metal circuit layer 22 may be a single-layer or multi-layer structure such as aluminum and molybdenum.
[0054] Please refer to Figure 3b , and then form a first passivation layer 23 on the metal circuit layer 22 and the base substrate 21 , and then use a mask to form a first photoresist layer 24 on the first passivation layer 23 . in:
[0055] The first passivation layer 23 covers t...
no. 2 example
[0066] Please refer to Figure 4a , the difference between the manufacturing method of the auxiliary scattering panel provided by the second embodiment of the present invention and the above-mentioned first embodiment is that after the planarization layer 25 is formed in the above-mentioned first embodiment (the manufacturing process before the planarization layer 25 is formed is different from that of the first embodiment) The embodiment is the same, and will not be repeated here), first, instead of forming the second photoresist layer 26 on the planarizing layer 25, a second passivation layer 28 is formed on the planarizing layer 25, and the second passivation layer 28 The exposed parts of the metal wiring layer 22 and the protrusions 232 are covered. The material of the second passivation layer 28 may be a single-layer or multi-layer structure such as silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide.
[0067] Please refer to Figure 4b , using the sa...
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