Multi-stage step-down gate voltage type sic-mosfet drive circuit

A driving circuit and gate voltage reduction technology, which is applied in circuit devices, emergency protection circuit devices for limiting overcurrent/overvoltage, emergency protection circuit devices, etc., can solve the problem of failure to realize short-circuit fault ride-through and short-circuit of devices that are not fully utilized To improve the fault ride-through capability, suppress the turn-off voltage peak, and reduce the short-circuit current

Active Publication Date: 2021-02-26
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method prolongs the short-circuit withstand time, but does not make full use of the short-circuit withstand capability of the device, and cannot achieve short-circuit fault ride-through

Method used

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  • Multi-stage step-down gate voltage type sic-mosfet drive circuit
  • Multi-stage step-down gate voltage type sic-mosfet drive circuit
  • Multi-stage step-down gate voltage type sic-mosfet drive circuit

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Embodiment Construction

[0026] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0027] Such as figure 1 As shown, the multi-level gate voltage reduction SiC-MOSFET drive circuit of the present invention includes a short circuit detection circuit 1, a shutdown logic control circuit 2, a totem pole circuit 3, a first stage gate voltage reduction circuit 4 and a second step down circuit Gate pressure soft shutdown circuit 5.

[0028] The short circuit detection circuit 1 includes a first comparator CMP 1 , snubber resistance R 1 , snubber capacitance C 1 and the second comparator CMP 2 ; The totem pole circuit 3 includes the upper end P-MOSFET switch tube S 1 and the lower side N-MOSFET switch tube S 2 ; The first stage step-down gate voltage circuit 4 is composed of the first diode D 1 , the second resistor R 2 and N-MOSFET third switch S 3 Composition; the second-level gate voltage drop soft turn-...

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Abstract

The invention discloses a multi-stage grid voltage reduction SiC-MOSFET drive circuit, including a short-circuit detection circuit, a turn-off logic control circuit, a totem pole circuit, a first-stage grid voltage reduction circuit, and a second gate voltage reduction soft-off circuit The short-circuit detection circuit judges the short-circuit peak current to detect the real occurrence of a short-circuit fault, and the first-stage gate voltage reduction circuit reduces and maintains the SiC-MOSFET gate voltage to the maximum short-circuit withstand time, improving the short-circuit ride-through capability of the device; through the second-stage reduction The gate voltage circuit further reduces the gate voltage to achieve soft turn-off, thereby suppressing the turn-off voltage spike. The invention ensures that the SiC-MOSFET is safely turned off under short-circuit conditions, effectively increases its short-circuit withstand time, and improves the fault ride-through capability.

Description

technical field [0001] The invention belongs to the field of power semiconductor devices, and in particular relates to a multi-stage gate voltage reduction SiC-MOSFET driving circuit. Background technique [0002] With the market's increasing demand for high-efficiency, high-power-density converters, such as the rise of new energy and electric vehicles, wide bandgap devices SiC-MOSFET (silicon carbide-metal oxide semiconductor field-effect transistor) are gradually being used. Compared with traditional Si-based power devices, SiC-MOSFET has weak short-circuit tolerance and is greatly affected by working conditions. When SiC-MOSFET works under conditions such as high DC bus voltage and high ambient temperature, its short-circuit tolerance will be limited significantly weakened. At the same time, in order to achieve fast turn-on and turn-off to reduce switching loss and reduce on-resistance to reduce conduction loss, the driving positive voltage of SiC-MOSFET is usually maint...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/08H02H3/08H02H9/02H02H7/20H02H3/06H02H9/04G01R31/52G01R31/26
CPCG01R31/50H02H3/06H02H3/08H02H7/20H02H9/02H02H9/04H02M1/08Y02B70/10
Inventor 肖华锋吴立亮
Owner SOUTHEAST UNIV
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