Method for manufacturing 3D memory device and 3D memory device

Abstract

The invention discloses a method for manufacturing a 3D memory device and the 3D memory device. The method comprises a step of forming a gate stacked structure on a substrate, a step of forming a plurality of channel holes passing through the gate stacked structure and depositing a channel layer on side walls and bottoms of the multiple channel holes, a step of oxidizing a portion of the channel layer to form an oxide layer, and a step of removing the oxide layer, wherein the oxide layer and the channel layer before oxidation have the same thickness variation tendency at each position. According to the method, the thickness of the channel layer at various places can be conveniently controlled by oxidizing a portion of the channel layer so as to raise the similarity of the thickness of thechannel layer, the problem of the uneven thickness of the channel layer is avoided, and therefore, the yield and reliability of the 3D memory device are improved.

Description

technical field [0001] The present invention relates to memory technology, and more specifically, to a manufacturing method of a 3D memory device and a 3D memory device. Background technique [0002] The improvement of the storage density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. A 3D memory device includes a plurality of memory cells stacked in a vertical direction, which can double the integration level on a wafer per unit area and reduce the cost. [0003] Existing 3D memory devices are mainly used as non-volatile flash memory. The two main non-volatile flash memory technologies use NAND and NOR structures, respectiv...

AI Technical Summary

Problems solved by technology

The similarity of the thickness of the finally formed polysilicon is too low, which will affect the electrical properties such as channel current, electric field intensity distribution, sub-threshold slope, etc., thus seriously affecting the overall performance of 3D memory devices

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