Cleaning process after silicon wafer CMP

A silicon wafer and process technology, applied in the field of cleaning technology after silicon wafer CMP, can solve the problems of incomplete effect, use impact, and inability to meet the needs of silicon wafer cleaning, and achieve fast and effective cleaning, reasonable process layout, and high precision. Effects of cleaning requirements

Active Publication Date: 2019-05-10
若名芯半导体科技(苏州)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] After the silicon wafer is CMP technology, many impurities remain on the silicon wafer, such as organic matter, some particles, and SiO 2 etc. These impurities are attached to the acidified film on the surface of the silicon wafer. During the cleaning process of the silicon wafer, the impurities need to be removed in time. Otherwise, due to the high precision required by the semiconductor industry, if they are not removed in time, it will cause great damage to Impact
However, the effect of the current cleaning process is not thorough, and organic matter and SiO may remain after the final cleaning. 2 Such impurities cannot meet the cleaning requirements of silicon wafers after CMP technology

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Embodiment one: a kind of cleaning process after silicon chip CMP, comprises the following steps:

[0044] (1) Pre-cleaning:

[0045] Step1: Carry out vibration cleaning to silicon chip by ozone water and ultrasonic cleaning equipment for 20 seconds;

[0046] Step2: first utilize the hydrofluoric acid of concentration 2% to rinse the silicon wafer for 10 seconds, then utilize ozone water to rinse the silicon wafer for 30 seconds;

[0047] Step3: Repeat the operation of Step2 three times, and alternately rinse the silicon wafer with hydrofluoric acid and ozone water several times;

[0048] Step4: Brush the front side of the silicon wafer with the alkaline liquid medicine, and the scrubbing time is 2 minutes;

[0049] Step5: Rinse the silicon wafer with pure water for 10 seconds, and finally spin the silicon wafer to dry.

[0050] (2) Inspection, use the inspection machine to inspect the pre-cleaned silicon wafers, if the pre-cleaned silicon wafers meet the requirement...

Embodiment 2

[0056] A cleaning process after silicon wafer CMP, comprising the steps:

[0057] (1) Pre-cleaning:

[0058] Step1: Carry out vibratory cleaning 80 seconds to silicon wafer by ozone water and ultrasonic cleaning equipment;

[0059] Step2: first utilize the hydrofluoric acid of concentration 4% to rinse the silicon wafer for 18 seconds, and then utilize ozone water to rinse the silicon wafer for 36 seconds;

[0060] Step3: Repeat the operation of Step2 5 times, and alternately rinse the silicon wafer with hydrofluoric acid and ozone water several times;

[0061]Step4: Brush the front of the silicon wafer with the alkaline liquid medicine, and the scrubbing time is 4 minutes;

[0062] Step5: Rinse the silicon wafer with pure water for 50 seconds, and finally spin the silicon wafer to dry.

[0063] (2) Inspection, use the inspection machine to inspect the pre-cleaned silicon wafers, if the pre-cleaned silicon wafers meet the requirements, enter step three; if not meet the requ...

Embodiment 3

[0068] Embodiment three: a kind of cleaning process after silicon chip CMP, comprises the following steps:

[0069] (1) Pre-cleaning:

[0070] Step1: Carry out vibratory cleaning to silicon chip by ozone water and ultrasonic cleaning equipment for 30 seconds;

[0071] Step2: first utilize the hydrofluoric acid of concentration 1.5% to rinse the silicon wafer for 10 seconds, and then utilize ozone water to rinse the silicon wafer for 33 seconds;

[0072] Step3: Repeat the operation of Step2 three times, and alternately rinse the silicon wafer with hydrofluoric acid and ozone water several times;

[0073] Step4: Brush the front side of the silicon wafer with the alkaline liquid medicine, and the scrubbing time is 1.5 minutes;

[0074] Step5: Rinse the silicon wafer with pure water for 12 seconds, and finally spin and dry the silicon wafer.

[0075] (2) Inspection, use the inspection machine to inspect the pre-cleaned silicon wafers, if the pre-cleaned silicon wafers meet the ...

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PUM

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Abstract

The invention relates to a cleaning process after silicon wafer CMP, comprising the following steps: step (1), cleaning: removing the polishing slurry on a silicon wafer; step (2), detection: detecting the pre-cleaned silicon wafer by using a detecting machine, proceeding the step (3) if the pre-cleaned silicon wafer meets the requirements, and otherwise, returning to the step (1) to continue thepre-cleaning; and step (3), final cleaning: removing the particles generated by the silicon wafer in the step (2), and further removing SiO2 contained in the polishing slurry on the silicon wafer. Thecleaning process after silicon wafer CMP provided by the invention adds vibration equipment in the pre-cleaning process for cooperation with ozone water to quickly and effectively remove organic matters, SiO2, particles and the protective layer on the surface of the acidified film and facilitate the subsequent removal of the acidified film by hydrofluoric acid, so as to effectively remove organicmatters, SiO2 and particles, and adds alkaline liquid of high temperature state to rinse the silicon wafer in the final cleaning to effectively remove residual SiO2.

Description

technical field [0001] The invention relates to the technical field of cleaning silicon wafers, in particular to a cleaning process for silicon wafers after CMP. Background technique [0002] Silicon wafer cleaning is the most important and frequent step in the semiconductor device production process. In order to avoid contamination of semiconductor devices by trace particles and metal impurities and affect the performance and yield of devices, silicon wafers need to be cleaned repeatedly and multiple times in the semiconductor manufacturing process. [0003] In the existing semiconductor manufacturing process, in order to better meet the high requirements of photolithography for planarization, chemical mechanical polishing process, that is, CMP has been widely used in deep submicron technology (<0.25um). [0004] After the silicon wafer is CMP technology, many impurities remain on the silicon wafer, such as organic matter, some particles, and SiO 2 etc. These impuritie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
Inventor 余涛唐杰
Owner 若名芯半导体科技(苏州)有限公司
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