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Preparation method of electron irradiation rapid recovery SJ-VDMOS with stable threshold voltage

A technology of SJ-VDMOS and electron irradiation, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., and can solve problems such as increasing complexity and increasing production costs

Inactive Publication Date: 2019-05-10
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these solutions will increase the complexity of actual production and increase the cost of production

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  • Preparation method of electron irradiation rapid recovery SJ-VDMOS with stable threshold voltage
  • Preparation method of electron irradiation rapid recovery SJ-VDMOS with stable threshold voltage
  • Preparation method of electron irradiation rapid recovery SJ-VDMOS with stable threshold voltage

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Embodiment Construction

[0024] In order to describe the technical solutions of the present invention in more detail, the present invention will be further described below with reference to the accompanying drawings.

[0025] Figure 4 It is a flow chart of a method for manufacturing SJ-VDMOS in an embodiment, and the method includes the following steps.

[0026] Step 1 Take the doping concentration as 1.5e19cm -3 The N+ substrate 100 is grown on the N+ substrate 100 with a thickness of T 1 And the doping concentration is 1.4e15cm -3 The N-type epitaxial layer is irradiated with electrons to form the N-type irradiated epitaxial layer 101. After this step, the corresponding device structure is as follows Figure 5-1 Shown

[0027] Step 2 Continue to grow another layer with a thickness of T on the N-type irradiated epitaxial layer 101 2 And the doping concentration is 1.4e15cm -3 Another N-type epitaxial layer 102, and the N-type irradiated epitaxial layer 101 and the other N-type epitaxial layer 102 form an N...

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Abstract

The invention relates to a preparation method of an electron irradiation rapid recovery SJ-VDMOS with stable threshold voltage. The preparation method comprises following steps of: providing an N+ substrate; growing an N type epitaxial layer on the N+ substrate; performing electron irradiation on the N type epitaxial layer, and forming an N type irradiation epitaxial layer; continuing to grow another N type epitaxial layer on the N type irradiation epitaxial layer, and making up an N type composite epitaxial layer by using the N type irradiation epitaxial layer and the another N type epitaxiallayer, wherein the N type epitaxial layer no longer experiences electron irradiation and is an N type non-irradiation epitaxial layer; forming a P type body area on the upper surface of the another Ntype epitaxial layer, and forming a P column in the N type composite epitaxial layer; forming a gate oxide layer and a polysilicon gate on the upper surface of the N type composite epitaxial layer; forming an N+ source area and a P+ area on the surface of the P type body area; depositing mediums between layers, etching contact holes, depositing metal at the source end, performing back processingso as to form a drain metal electrode, and forming a final device structure.

Description

Technical field [0001] The present invention relates to the field of power semiconductor devices, in particular to a method for preparing a fast reverse recovery SJ-VDMOS device that adopts electron irradiation technology and can maintain a stable threshold value Background technique [0002] Super junction-vertical diffusion field effect transistors (SJ-VDMOS) have the advantages of fast switching speed, high input impedance, and good frequency characteristics, which are increasingly used in high-frequency circuits. The drift region of SJ-VDMOS adopts a structure in which P-pillars and N-pillars are alternately arranged, so that SJ-VDMOS has both extremely high reverse breakdown voltage and extremely low forward conduction resistance. [0003] Due to the above advantages, SJ-VDMOS is widely used in three-phase bridge circuits, motor speed control, inverters, smart power modules, electronic switches, automotive electrical appliances and electronic ballasts. When the body diode of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/06
Inventor 祝靖李阿江李少红孙伟锋陆生礼时龙兴
Owner SOUTHEAST UNIV