A four-order memristor band-pass filter chaotic circuit

A chaotic circuit and filter technology, applied in electrical components, safety communication devices, digital transmission systems, etc., can solve the problems of complex manufacturing process and high cost of memristors, and achieve the effect of simple structure

Inactive Publication Date: 2019-05-10
JIANGSU UNIV OF TECH
View PDF1 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, memristors are currently expensive and the manufacturing process is extremely complicated. Only a few

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A four-order memristor band-pass filter chaotic circuit
  • A four-order memristor band-pass filter chaotic circuit
  • A four-order memristor band-pass filter chaotic circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The present invention will be further described below in conjunction with the given drawings and specific examples of the present invention. It should be understood that these embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention. Based on the embodiments of the present invention, those of ordinary skill in the art All other examples were obtained without creative effort. All belong to the protection scope of the present invention.

[0019] Mathematical modeling: the present invention adopts second-order active generalized memristor, and its equivalent realization circuit is as figure 2 shown. Let the input terminal voltage and current of the second-order active generalized memristor GM be vM and iM respectively; can be described as

[0020]

[0021]

[0022] Among them, ρ=1 / (2nVT), IS, n and VT represent the reverse saturation current, emission coefficient and cut-off voltage of the diod...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a chaotic signal generation circuit, in particular to a four-order memristor band-pass filter chaotic circuit which is simple in structure and capable of generating complex nonlinear phenomena, and comprises an operational amplifier U, resistors R1, R2 and R3, capacitors C1 and C2 and a second-order active generalized memristor GM, Wherein a resistor R1 is bridged betweenthe inverting input end and the output end of the operational amplifier U, a resistor R2 is bridged between the non-inverting input end and the output end of the operational amplifier U, one end of aresistor R3 is connected with the non-inverting input end of the operational amplifier U, and the other end of the resistor R3 is grounded; The positive end of the capacitor C1 is connected with the inverted input end of the U, and the negative end of the capacitor C1 is connected with the positive end of the generalized memristor GM; The positive end of the capacitor C2 is connected with the output end of the U, and the negative end of the capacitor C1 is connected with the positive end of the generalized memristor GM; And the negative end of the generalized memristor GM is grounded.

Description

technical field [0001] The invention relates to a chaotic signal generating circuit, in particular to a chaotic circuit of a fourth-order memristive bandpass filter. Background technique [0002] Due to the unique nonlinear characteristics of memristors, the research on memristive chaotic circuits with memristors has exploded in the past 30 years. Unfortunately, memristors are currently expensive and the manufacturing process is extremely complicated. Only a few companies have mastered its manufacturing technology, and they cannot be obtained from the market in the short term. Fortunately, an equivalent circuit can be designed to simulate the characteristics of a memristor using conventional analog electronics that are already available, such as operational amplifiers, capacitors, resistors, inductors, etc. When designing a circuit, considering the feasibility and practicability of the circuit, the circuit design usually aims at a simple structure and easy implementation. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H04L9/00
Inventor 陈连玉
Owner JIANGSU UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap