Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin film deposition method and device based on inert gas/oxygen plasma

A thin film deposition device and oxygen plasma technology, applied in the application field of plasma technology, can solve the problems of thin film defects and small thin film area, and achieve the effects of compact and compact structure, increase deposition area, and ensure strength and stability

Active Publication Date: 2021-06-18
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI +1
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Therefore, the technical problem to be solved in the present invention is to overcome problems such as defects in the film caused by uneven distribution of groups on the film in the prior art, small film area, etc., thereby providing a film deposition method based on inert gas / oxygen plasma and device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film deposition method and device based on inert gas/oxygen plasma
  • Thin film deposition method and device based on inert gas/oxygen plasma
  • Thin film deposition method and device based on inert gas/oxygen plasma

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] This embodiment provides a thin film deposition device based on inert gas / oxygen plasma, such as figure 1 As shown, it includes an inert gas supply device and an oxygen supply device, for example, the inert gas supply device can be an argon gas cylinder 1-1, and the oxygen supply device can be an oxygen cylinder 1-2, and also includes,

[0049] A precursor liquid storage device, the air inlet of which is in communication with the inert gas supply device, so that the precursor is taken out of the precursor liquid storage device by an inert gas, specifically, the precursor liquid storage device is equipped with a precursor Body bubbler bottles 1-5;

[0050] A plasma processing device comprising an inner tube, an outer tube sheathed outside the inner tube with openings at both ends, and a high-voltage electrode 1-8 placed in the inner tube, openings are provided on the side wall of the outer tube, The oxygen supply device communicates with the opening through a pipeline, ...

Embodiment 2

[0068] This embodiment provides a thin film deposition method based on inert gas / oxygen plasma, comprising the following steps:

[0069] Select the epoxy resin doped with aluminum oxide (Al 2 o 3 -ER) as the substrate material, after wiping the sample with a dust-free cloth and absolute ethanol, put it into an ultrasonic cleaner filled with deionized water for cleaning, the cleaning temperature is 70°C, and the cleaning time is 20min; then put it into a vacuum Dry in a drying oven with an air pressure of 3kPa, a drying temperature of 70°C, and a drying time of 10 hours; after drying, the substrate material is placed on a heating platform, the substrate material is controlled at 100°C, and the precursor is tetraethyl orthosilicate (TEOS ), heated in an oil bath at 60°C, the flow rate of the argon flow into TEOS was 300 sccm, the flow rate of the other argon flow was 3 slm, the flow rate of oxygen was set to 50 sccm respectively, the high-frequency high-voltage power supply app...

Embodiment 3

[0078] This embodiment provides a thin film deposition method based on inert gas / oxygen plasma, comprising the following steps:

[0079] Select polystyrene with a size of 50×50×2mm as the substrate material. After wiping the sample with a dust-free cloth and absolute ethanol, put it into an ultrasonic cleaner filled with deionized water for cleaning. The cleaning temperature is 65°C and the cleaning time is Then put it into a vacuum drying oven for drying, the air pressure is 3kPa, the drying temperature is 75°C, and the drying time is 9h; after drying, place the substrate material on the heating platform, control the substrate material at 70°C, and TiCl 4 , heated in an oil bath at 65°C, and passed through TiCl 4 The argon flow rate of the first channel is 50sccm, the other argon flow rate is 3slm, the oxygen flow rate is set to 15sccm respectively, the applied voltage of high-frequency high-voltage power supply is 12kV, and the frequency is 15kHz. After plasma treatment, Ti...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the application field of plasma technology, and in particular relates to a film deposition method based on inert gas / oxygen plasma. The method includes passing the carrier gas into the precursor, collecting the carrier gas entrained with the precursor vapor, and then mixing it with the excitation gas for plasma treatment to obtain the processed mixture, depositing it on the surface of the substrate, controlling the temperature of the substrate, and reacting to obtain the deposited The thin film on the substrate; the excitation gas includes inert gas and oxygen, the carrier gas includes argon, and the inert gas includes argon. This method uses oxygen as the excitation gas, which can expand the discharge channel, make the discharge process more stable, increase the content of Si-O-Si and Si-OH groups, make it stable in the film growth area, and improve the film stability. Uniformity: By controlling the temperature of the substrate, the migration rate of atoms on the substrate can be accelerated, the agglomeration phenomenon and hole structure can be reduced, the group distribution is more uniform, and the film structure is denser.

Description

technical field [0001] The invention belongs to the application field of plasma technology, and in particular relates to a film deposition method and device based on inert gas / oxygen plasma. Background technique [0002] In recent years, atmospheric pressure low-temperature plasma technology has received widespread attention in the field of material modification. Active particles and high-energy electrons in low-temperature plasma undergo physical etching, cross-linking, grafting and other processes on the surface of materials, and can graft different materials on the surface of materials. groups and polar components, thereby improving the electrical properties of the material surface. Compared with other modification methods, low-temperature plasma material surface modification has the advantages of simple treatment conditions, less energy consumption, high efficiency, and no pollution. In addition, the effect of low-temperature plasma modification on the surface of materi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/448C23C16/513
Inventor 章程王婷婷邵涛张福增马翊洋王国利罗兵
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com