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Semiconductor image sensing device and manufacturing method thereof

A semiconductor and image sensor technology, applied in the direction of semiconductor devices, radiation control devices, electric solid devices, etc., can solve the problem of reducing the layout area of ​​pixels

Active Publication Date: 2021-12-14
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

DTIs with tapered profiles face layout constraints as the pixel pitch scales down, and thus reduce the layout area of ​​the pixels

Method used

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  • Semiconductor image sensing device and manufacturing method thereof
  • Semiconductor image sensing device and manufacturing method thereof
  • Semiconductor image sensing device and manufacturing method thereof

Examples

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Embodiment Construction

[0010] The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, in the description below, a first feature formed over or on a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed on the first feature An embodiment in which the first member and the second member are not in direct contact with the second member. In addition, the present disclosure may repeat element symbols and / or letters in various examples. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0011] In ...

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Abstract

Embodiments of the present invention relate to a semiconductor image sensing device and a manufacturing method thereof. An embodiment of the present invention relates to a semiconductor image sensor device, which includes a semiconductor substrate, a radiation sensing region, and a first isolation structure. The radiation sensing region is in the semiconductor substrate. The first isolation structure is in the semiconductor substrate and adjacent to the radiation sensing region. The first isolation structure includes a bottom isolation portion in the semiconductor substrate, an upper isolation portion in the semiconductor substrate, and a diffusion barrier layer surrounding sidewalls of the upper isolation portion.

Description

technical field [0001] Embodiments of the present invention relate to a semiconductor image sensing device and a manufacturing method thereof. Background technique [0002] Semiconductor image sensor devices such as complementary metal-oxide-semiconductor (CMOS) image sensors (CIS) and charge-coupled device (CCD) sensors are capable of sensing radiation such as light, and are widely used in, for example, digital still cameras (DSC) or mobile Among various applications of phone camera app. A semiconductor image sensor device includes pixels arranged in an array on a substrate, and each pixel includes a photodiode and drive components for absorbing radiation projected toward the substrate and converting the sensed radiation into electrical signals. [0003] Pixels of the semiconductor image sensor are isolated from each other by isolation structures such as deep trench isolation (DTI). The DTI of a conventional semiconductor image sensor is formed through a shallow trench is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/1464H01L27/14643H01L27/14689H01L27/1463H01L27/14687
Inventor 江彦廷陈春元曾晓晖李升展王昱仁吴尉壮丁世汎刘人诚杨敦年
Owner TAIWAN SEMICON MFG CO LTD