Core-shell gate electrode of nonvolatile three-dimensional semiconductor memory and preparation method of core-shell gate electrode

Abstract

The invention discloses a core-shell gate electrode of a nonvolatile three-dimensional semiconductor memory and a preparation method of the core-shell gate electrode. The core-shell gate electrode comprises m rows and n columns of core-shell gate electrode unit arrays which are distributed step by step from low to high, and each core-shell gate electrode unit is of a columnar structure and is composed of an inner core metal column and a hollow metal shell; the lower surfaces of the same column of core-shell gate electrode units are connected with a same word line, and the upper surfaces are connected with a same control gate layer; each inner core metal column is made of a metal material with good conductivity and heat conductivity, so that the electrical property of the device is ensured;each hollow shell is made of a material which is small in electrostriction change along with the size and high in electric conductivity, the electrode connection position is effectively prevented from being fused, and therefore the use performance of the nonvolatile three-dimensional semiconductor memory is improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, and more specifically relates to a core-shell gate electrode of a nonvolatile three-dimensional semiconductor memory and a preparation method thereof. Background technique [0002] In order to meet the development of high-efficiency and low-cost microelectronics industry, semiconductor memories need to have higher integration density. High density is crucial to reducing the cost of semiconductor products. For traditional two-dimensional and planar semiconductor memories, their integration density mainly depends on the unit area occupied by a single storage device, and the integration degree is very dependent on the quality of the mask process. However, even with the continuous use of expensive process equipment to improve the precision of the mask process, the increase in integration density is still very limited, especially with the development of Moore's Law, below the 22nm proc...

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Problems solved by technology

[0005] Aiming at the defects of the prior art, the object of the present invention is to provide a core-shell gate electrode of a non-volatile three-dimensional semiconductor memory and a preparation method thereof, aiming at solving the problem of the super-high-layer stacked non-volatile three-dimensional semiconductor memory gate in the prior art. After the size of the electrode is continuously reduced, the ordinary metal material will generate a large electrostrictive stress due to the high specific surface area after repeated application of high voltage, which will cause the electrode connection to fuse and cause the memory to fail.

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