An absolute value magnetic control memristor equivalent simulation circuit

Abstract

The invention discloses an absolute value magnetic control memristor equivalent simulation circuit, and belongs to the technical field of circuit design. According to the invention, the volt-ampere characteristic of the generalized memristor is realized by using the analog circuit; the volt-ampere characteristic of the generalized memristor is realized; wherein the integrated operational circuit is used for realizing corresponding operation in the characteristics of the memristor, the voltage follower is used for realizing that an output voltage is equal to an input voltage, the inverting integrator is used for realizing integral operation on the input voltage, and the inverting proportioner is used for realizing that the output voltage and the input voltage are in a proportional operationrelationship and are inverted; The absolute value circuit network is used for realizing that the output voltage is the absolute value of the input voltage; And the multiplication circuit is used forrealizing multiplication of input signals from two ends. The absolute value magnetic control memristor equivalent simulation circuit is simple in structure, can replace an actual generalized memristorto realize memristor-related circuit design, experiment and application, and is of great significance to the characteristic and application research of the memristor.

Description

technical field [0001] The invention belongs to the technical field of circuit design, and in particular relates to an equivalent analog circuit of an absolute value magnetron memristor. Background technique [0002] Memristor is the fourth basic circuit element after resistance, capacitance and inductance. It describes the relationship between magnetic flux and charge, and has characteristics that cannot be copied by any combination of the other three basic circuit elements. It is a kind of Non-linear resistance with memory function. In 1971, Chua theoretically predicted the existence of memristor elements according to the completeness theorem of basic circuit variable combinations. It was not until 2008 that Hewlett-Packard Labs made a physical TiO2 memristor for the first time. Memristors can remember the amount of charge flowing through it, which makes it a natural non-volatile memory. The emergence of memristors has made integrated circuit components small and portable...

AI Technical Summary

Problems solved by technology

[0003]Currently, the reported memristor simulation models include PSPICE simulation model and hardware equivalent circuit of simulated memristor. On the one hand, the principles of these two types of memristor models are complex , difficult to realize in practice; on the other hand, it is difficult for these two types of memristors to accurately simulate the characteristics of actual memristors

Images