An air-cooled heat sink for high-power igbt modules considering operating conditions

It is a technology with high operating conditions and high power. It is applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc. It can solve problems such as inconvenient water and inability to dissipate heat, uneven distribution of IGBT module junction temperature or case temperature, and achieve convenience. Large-area application, improved reliability and service life, and reduced thermal stress

Inactive Publication Date: 2021-03-30
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The air-cooled heat sink can solve the problem of uneven distribution of junction temperature or case temperature inside the IGBT module under the inverter working condition or the rectifying working condition, and solve the problem that the converter or other power electronic devices are installed in the field, water is inconvenient, and cannot Use water cooling to strengthen the problem of heat dissipation

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  • An air-cooled heat sink for high-power igbt modules considering operating conditions
  • An air-cooled heat sink for high-power igbt modules considering operating conditions
  • An air-cooled heat sink for high-power igbt modules considering operating conditions

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Embodiment Construction

[0020] Describe the present invention in detail below in conjunction with embodiment and accompanying drawing. The embodiment is based on the specific implementation carried out on the premise of the technical solution of the present invention, and provides detailed implementation methods and processes. However, the protection scope of the claims of the present application is not limited to the description of the following embodiments.

[0021] The invention provides a high-power IGBT module air-cooled heat sink (abbreviated as air-cooled heat sink, see Figure 5-7 ), including a copper cooling base 22 installed on the back of the copper substrate 3 of the IGBT module, a cooling fin 23 vertically welded on the outer surface of the copper cooling base 22, and a cooling fan 27 arranged on one side of the cooling fin 23 A depression 310 is set on the position outside the copper heat dissipation base 22 corresponding to the IGBT chip 5, or a depression 313 is set on the position ...

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Abstract

The invention discloses an air-cooled radiating fin for high-power IGBT modules considering operating conditions. The air-cooled radiating fin comprises a copper radiating base installed on the back of a copper substrate of an IGBT module, a radiating warping fin vertically welded on the outer side of the copper radiating base, and a radiating fan arranged on one side of the radiating warping fin.A depression is arranged at a position of the outer side of the copper radiating base corresponding to an IGBT chip, or a depression is arranged at a position of the outer side of the copper radiating base corresponding to a diode chip. A copper tube heat exchanger is welded at the depression. The copper tube heat exchanger is composed of a radiator coolant inlet pipe, a radiator coolant outlet pipe, a radiating cold circulation pump and a copper tube radiator warping fin, is filled with cooling liquid, and is a closed internal circulation liquid radiating system. By fully considering the inconsistency of local heating values of the IGBT module under different operating conditions, a copper tube heat exchanger system is designed at the part with high local heating value of the IGBT moduleto realize uniform heat radiation of the copper substrate.

Description

technical field [0001] The invention relates to the technical field of heat dissipation, in particular to an air-cooled heat sink for a high-power IGBT module in consideration of operating conditions. Background technique [0002] The IGBT module (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor). The advantages of high input impedance of MOSFET and low turn-on voltage drop of GTR. At present, the high-power IGBT module (single module) that can be applied in engineering can withstand a voltage of up to 6.5kV, a current load of up to thousands of amperes, a fast breaking speed, and a high switching frequency. High-power IGBT modules are currently widely used in fields such as high-voltage DC transmission, transportation, and renewable energy power generation. They are the core components of power e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/467H01L23/473H01L23/367
Inventor 王希平李志刚姚文森姜涛
Owner HEBEI UNIV OF TECH
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