Vertical structure near ultraviolet light emitting diode and preparation method thereof
A light-emitting diode, vertical structure technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as low light extraction efficiency
Active Publication Date: 2020-12-11
NANJING UNIV OF POSTS & TELECOMM
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Problems solved by technology
[0005] The vertical structure near-ultraviolet light-emitting diode and the preparation method thereof of the present invention are used to solve the problem of low light extraction efficiency of the existing near-ultraviolet light-emitting diodes
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[0035] The specific implementation of the vertical structure near-ultraviolet light-emitting diode provided by the present invention and its preparation method will be described in detail below with reference to the accompanying drawings.
[0036] This specific embodiment provides a near-ultraviolet light-emitting diode with a vertical structure, with figure 1 It is a structural schematic diagram of a vertical structure near-ultraviolet light-emitting diode in a specific embodiment of the present invention. Such as figure 1 As shown, the vertical structure near-ultraviolet light-emitting diode provided in this specific embodiment includes:
[0037] a conductive substrate 10 having a first surface and a second surface opposite to the first surface;
[0038] a metal reflective layer 11 located on the first surface;
[0039] Nitride epitaxial layer, located on the surface of the metal reflective layer 11, including a P-type GaN layer 12, a quantum well layer 13, a preparation ...
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Abstract
The invention relates to the fields of illumination, display and optical communication, in particular to a vertical-structure near ultraviolet light-emitting diode and a preparation method thereof. The vertical-structure near ultraviolet light-emitting diode comprises a conductive substrate, a metal reflective layer, a nitride epitaxial layer, an N-type electrode and a P-type electrode, wherein the conductive substrate has a first surface and a second surface opposite to the first surface; the metal reflective layer is arranged on the first surface; the nitride epitaxial layer is arranged on the surface of the metal reflective layer, the nitride epitaxial layer comprises a P-type GaN layer, a quantum well layer, a preparation layer and an N-type AlGaN layer which are sequentially stacked in a direction perpendicular to the conductive substrate, and the thickness of the nitride epitaxial layer is less than a wavelength of near-ultraviolet light; the N-type electrode is arranged on the surface of the N-type AlGaN layer; and the P-type electrode is arranged on the second surface. The vertical-structure near ultraviolet light-emitting diode reduces the absorption loss inside the light-emitting diode and greatly improves the light-emitting efficiency.
Description
technical field [0001] The invention relates to the fields of illumination, display and optical communication, in particular to a vertical structure near-ultraviolet light-emitting diode and a preparation method thereof. Background technique [0002] Light emitting diodes (Light Emitting Diode, LED) have the advantages of small size, high efficiency, long life, etc., and have broad application prospects in the fields of illumination, display and optical communication. Traditional light-emitting diodes use sapphire as a growth substrate. However, since the sapphire substrate is non-conductive, conventional light-emitting diodes usually adopt a lateral structure with electrodes on the same side. This lateral structure has at least the following two disadvantages: on the one hand, the current flows in the N-type layer laterally at unequal distances, and there is a current congestion phenomenon, which leads to high local heat generation of the light-emitting diode device and af...
Claims
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IPC IPC(8): H01L33/20H01L33/46H01L33/00
Inventor 王永进王帅倪曙煜袁佳磊
Owner NANJING UNIV OF POSTS & TELECOMM