A micro-semiconductor nozzle structure

Abstract

The present invention proposes a micro-semiconductor nozzle structure, including a shell, an insulator, a central electrode and a wafer. The main body of the central electrode is a stepped cylindrical structure, the discharge end has a cap, and the surface is plated with nickel; the main body of the insulator is an outer circle with a stepped surface There is a cylindrical structure with axially stepped through holes inside; the small diameter end of the insulator is the discharge end, sintered with semiconductor materials; the stepped surface of the insulator through hole and the outer circle at the same radial position as the stepped surface of the through hole have a metallization layer, and the insulator The diameter of the small-diameter section of the through hole is consistent with the diameter and length of the large-diameter section of the center electrode; there is a tool relief groove at the part corresponding to the metallization position of the outer circle of the shell and the insulator; the disc has a central through hole, and the center electrode and the insulator can be brazed through the disc. welded together. The invention reduces the discharge voltage under the air pressure of the micro-semiconductor electric nozzle, improves the qualified rate of the product, improves the product quality and prolongs its service life.

Description

technical field [0001] The invention belongs to the micro-semiconductor electric nozzle of an aero-engine, and relates to a structure of a micro-semiconductor electric nozzle. Background technique [0002] The miniature semiconductor nozzle is an important accessory of the aircraft engine. The advantages of the miniature semiconductor nozzle are simple structure and good processability; the disadvantages are high discharge voltage under air pressure, low product qualification rate and short service life. The structure of the micro-semiconductor nozzle is composed of a housing 1, an insulator 2, a center electrode 3, and a bushing 4 (see the structure diagram of the current micro-semiconductor nozzle. figure 1 ). The reason for the high discharge voltage under air pressure is that there is an unavoidable gap between the center electrode 3 and the insulator 2 (mainly because the center electrode 3 is a metal part and the insulator 2 is a ceramic part. If there is no gap betwe...

AI Technical Summary

Problems solved by technology

[0005] The biggest defect of the current micro-semiconductor nozzle is high discharge voltage under air pressure, low pass rate, and short service life

The root cause is the linear structure of the center electrode discharge end. The design defect caused by this structure is the unavoidable gap between the center electrode 3 and the insulator 2. Under a certain air pressure, the gap will form an insulating dielectric layer that is difficult to break down , resulting in high discharge voltage under air pressure; at the same time, the linear structure of the center electrode 3 causes the size of the discharge end to be small, and the electric corrosion resistance time of the discharge end of the center electrode 3 is short during the operation of the miniature semiconductor nozzle, resulting in the service life of the miniature semiconductor nozzle short

At the same time, after brazing, due to the excessive infiltration of solder onto the thread of the housing 1 and partial thread deformation, the micro semiconductor electric nozzle is scrapped, and the product qualification rate is low.

Images