Memory array structure and manufacturing method, memory and writing method and reading method

Abstract

The invention provides a storage array structure and preparation method, memory, writing method and reading method. The array structure includes: at least one storage unit, including superconducting devices and magnetic storage devices stacked in series; at least one superconducting upper electrode , is arranged above the memory unit, at least one superconducting lower electrode is arranged below the memory unit, at least one superconducting word line is arranged above the memory unit, or is arranged below the memory unit, and the superconducting word line is close to the superconducting electrode in the memory unit. Guide device settings. The invention organically combines a magnetic memory device with a superconducting integrated circuit, and uses the superconducting device to realize the switching effect of the circuit, thereby replacing the CMOS logic circuit, enabling the memory to work at low temperatures, and ensuring that the MRAM can achieve high speed and high speed at low operating voltage. High-density storage realizes the above work based on different writing methods, forming an information reading method suitable for superconducting logic processes. The structural design is simple, which is beneficial to reducing the number of etching times.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to a memory array structure and a preparation method, a memory, and a writing method and a reading method. Background technique [0002] As a new type of non-volatile storage technology, Magnetic Random Access Memory (MRAM) has high-speed random read and write, high integration, low write power, good fatigue resistance, considerable economic advantages. Therefore, MRAM is widely used in advanced technology fields such as consumer electronics, artificial intelligence, mechanical automation, Internet of Things and big data, and aerospace. [0003] At present, most of the relatively well-developed MRAMs are combined with CMOS logic circuits, and the working temperature range is generally not lower than room temperature. However, there are very few applications of MRAM at low temperatures. How to find magnetic memory cells that maintain excellent electrical properties at ex...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a memory array structure and preparation method, a memory and a writing method and a reading method, which are used to solve the problem that the memory in the prior art is difficult to work under extreme low temperature conditions. And problems such as high memory energy consumption and high operating voltage

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