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Semiconductor device and method of forming the same

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as poor performance of semiconductor devices, achieve the effects of reduced contact resistance, increased contact area, and improved performance

Active Publication Date: 2022-02-15
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the performance of semiconductor devices formed by existing methods for forming semiconductor devices is poor

Method used

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  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same

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Experimental program
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Embodiment Construction

[0027] As mentioned in the background, semiconductor devices formed in the prior art have poor performance.

[0028] Figure 1 to Figure 5 It is a schematic diagram of the structure of a semiconductor device.

[0029] Please refer to figure 1 and figure 2 , figure 2 for along figure 1 The cross-sectional view of the middle cutting line N-N1 provides a semiconductor substrate 100 with a fin 110 and an isolation structure 101 on the semiconductor substrate, and the isolation structure 101 covers part of the sidewall of the fin 110; on the fin Forming a dummy gate structure across the fin, the dummy gate structure includes a dummy gate dielectric layer 102 located on the surface of the semiconductor substrate, a dummy gate layer 120 located on the dummy gate dielectric layer 102, a dummy gate layer located on the dummy gate layer The protective layer 103 on the surface of 120 and the first spacer 130 located on the sidewall of the dummy gate layer, and the first spacer 13...

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Abstract

A semiconductor device and a method for forming the same, the method comprising: providing a semiconductor substrate having a fin and a dummy gate structure across the fin; on the fin and the dummy gate structure Forming a sidewall material layer, the sidewall material layer covers the sidewall and top surface of the dummy gate structure and the sidewall and top surface of the fin; after forming the sidewall material layer, a dielectric layer is formed on the surface of the sidewall material layer, and the The top surface of the dielectric layer is lower than the top surface of the fin or flush with the top surface of the fin, exposing the top surface of the fin; after forming the dielectric layer, grooves are formed in the fins on both sides of the dummy gate structure, and the concave The groove exposes part of the side wall of the sidewall material layer; the bottom of the groove is cleaned; after the bottom of the groove is cleaned, a source-drain doping layer is formed in the groove. The method improves the performance of semiconductor devices.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher element density and higher integration. As the most basic semiconductor device, the device is being widely used at present. The control ability of the traditional planar device to the channel current is weakened, resulting in the short channel effect and causing the leakage current, which ultimately affects the electrical performance of the semiconductor device. [0003] In order to overcome the short channel effect of the device and suppress the leakage current, the prior art proposes a fin field effect transistor (Fin FET), which is a common multi-gate device, and the structure of the fin field effect transistor includes : the fin and the isolation layer located on the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/08H01L29/78
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP
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