Graphene heating film and preparation method thereof
A graphene heating film and graphene technology, applied in the field of graphene heating film and its preparation, to achieve the effects of excellent insulation performance, fast heating rate, and satisfying use requirements
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Embodiment 1
[0040] A graphene heating film and preparation method thereof, comprising an insulating layer 1, a film-forming substrate 2 and a graphene heating core 3, the insulating layer 1 is wrapped on the surfaces of the film-forming substrate 2 and the graphene heating core 3, and the film is formed The bottom of the substrate 2 is provided with a PI film 5, and the two sides of the PI film 5 are in contact with the graphene heating core 3 and the insulating layer 1 respectively.
[0041] The present invention also provides a method for preparing a graphene heating film, comprising the following steps:
[0042] Step 1: Etch the copper-clad PI film 5, etch for 5 minutes in the erosive state of the etching solution, and the etching temperature is 15 degrees Celsius to form a conductive line 4, and one end of the conductive line 4 forms a lead joint, and the lead joints are respectively connected The positive and negative poles of the power supply, and then deposit a metal layer to obtain ...
Embodiment 2
[0056] Embodiment two: the difference between this embodiment and embodiment one is:
[0057] A graphene heating film and preparation method thereof, comprising an insulating layer 1, a film-forming substrate 2 and a graphene heating core 3, the insulating layer 1 is wrapped on the surfaces of the film-forming substrate 2 and the graphene heating core 3, and the film is formed The bottom of the substrate 2 is provided with a PI film 5, and the two sides of the PI film 5 are in contact with the graphene heating core 3 and the insulating layer 1 respectively.
[0058] The present invention also provides a method for preparing a graphene heating film, comprising the following steps:
[0059] Step 1: Etching the copper-clad PI film 5, and etching it for 8 minutes in the erosive state of the etching solution, at an etching temperature of 18 degrees Celsius, to form a conductive line 4, one end of the conductive line 4 forms a lead joint, and the lead joints are respectively connect...
Embodiment 3
[0073] Embodiment three: the difference between this embodiment and embodiment one and embodiment two is:
[0074] A graphene heating film and preparation method thereof, comprising an insulating layer 1, a film-forming substrate 2 and a graphene heating core 3, the insulating layer 1 is wrapped on the surfaces of the film-forming substrate 2 and the graphene heating core 3, and the film is formed The bottom of the substrate 2 is provided with a PI film 5, and the two sides of the PI film 5 are in contact with the graphene heating core 3 and the insulating layer 1 respectively.
[0075] The present invention also provides a method for preparing a graphene heating film, comprising the following steps:
[0076] Step 1: Etching the copper-clad PI film 5, etching it for 10 minutes in the erosive state of the etching solution, and the etching temperature is 20 degrees Celsius, to form a conductive line 4, and one end of the conductive line 4 forms a lead joint, and the lead joints ...
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Abstract
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