A kind of 3d NAND storage device and its manufacturing method
A storage device and manufacturing method technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of large RC delay effect of storage devices, increased parasitic capacitance, affecting device performance, etc.
Active Publication Date: 2021-04-09
YANGTZE MEMORY TECH CO LTD
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] However, in the prior art, in order to increase the storage density, the size of the storage device is getting smaller and smaller, resulting in a decrease in the distance between the conductive layers in the device, resulting in an increase in the parasitic capacitance between the conductive layers, As a result, the storage device has a large RC delay effect, which affects device performance
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0027] In order to make the above-mentioned purpose, features and advantages of the present application more obvious and understandable, the specific implementation manners of the present application will be described in detail below in conjunction with the accompanying drawings.
[0028] In the following description, a lot of specific details are set forth in order to fully understand the application, but the application can also be implemented in other ways different from those described here, and those skilled in the art can do it without violating the content of the application. By analogy, the present application is therefore not limited by the specific embodiments disclosed below.
[0029] Secondly, the present application is described in detail in combination with schematic diagrams. When describing the embodiments of the present application in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The present application provides a 3D NAND storage device and a manufacturing method thereof. A stacked layer in which gate layers and insulating layers are alternately stacked and a common source trench penetrating through the stacked layer are formed on the substrate, and a common source trench is formed in the common source trench. A filling layer and a spacer layer, the spacer layer is located between the gate layer and the filling layer, removing the spacer layer between the stacked layer and the filling layer can form a sidewall spacer, and a sidewall spacer is formed in the sidewall spacer Dielectric layer, an air gap is formed in the sidewall dielectric layer, since the dielectric constant of air is small, the parasitic capacitance between the gate layer and the filling layer is small, thereby reducing the RC delay of the storage device and improving device performance.
Description
technical field [0001] The present application relates to the field of semiconductor devices and their manufacture, in particular to a 3D NAND memory device and its manufacturing method. Background technique [0002] NAND storage devices are non-volatile storage products with low power consumption, light weight and good performance. They can still maintain stored data information in the event of power failure, and have been widely used in electronic products. Planar NAND devices are close to the limit of practical expansion. In order to further increase storage capacity and reduce storage cost per bit, 3D NAND storage devices are proposed. [0003] In the 3D NAND storage device structure, the method of vertically stacking multi-layer gates is adopted. In the storage device, a stacked layer of a conductive layer and a silicon oxide layer can be formed on the substrate. The conductive layer in the stacked layer serves as a gate line, and the stacked layer A channel structure ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/764H01L27/1157H01L27/11578H10B43/20H10B43/35
Inventor 王启光
Owner YANGTZE MEMORY TECH CO LTD