RF MEMS switch based on superlubricity structure

Abstract

The invention provides an RF MEMS switch and an implementation method thereof. The RF MEMS switch includes a substrate, and a group including a fixed portion, a movable portion and a driving portion which are horizontally arranged above the substrate, wherein the movable portion includes a self-supporting portion composed of a self-recoverable graphite island and a slidable portion; the driving portion can drive the slidable portion to move horizontally on the self-supporting portion, so that a contact electrode used in cooperation with the fixed portion and the movable portion can realizes switching. The RF MEMS switch has a long service life and stable device performance because the slidable portion is always supported by the self-supporting portion and utilizes Van der Waals force as arestoring force to avoid deformation caused by gravity and mechanical fatigue.

Description

technical field [0001] The invention belongs to the technical field of radio frequency micro-electromechanical system switches (RF MEMS Switch), and in particular relates to an RF MEMS switch based on a superslip structure and a realization method thereof. Background technique [0002] With the development of radar and wireless communication technology, small size, low power consumption, high performance and multi-functional radio frequency equipment has become the development trend in the radio field, and radio frequency devices are developing in the direction of miniaturization and integration, and MEMS switches emerge as the times require , RF MEMS switches have gradually replaced traditional GaAs FET switches and become the development direction of RF switches (RF Switch). Compared with traditional switches, RFMEMS switches have the advantages of lower insertion loss, higher isolation, better linearity, lower power consumption, smaller volume, etc., and can be easily int...

AI Technical Summary

Problems solved by technology

No matter what kind of drive is used for these existing RF MEMS switches, their structural methods have common defects: one is that the movable parts of the existing devices are all suspended, and in the case of long-term use, they are easily deformed by the influence of gravity The second is that the restoring force of the existing devices all relies on the mechanical strength of the MEMS device itself for elastic recovery (using the principle similar to a spring), and in the case of long-term use, it is prone to fatigue and deformation

It can be seen that the suspended cantilever beam and the bridge are pulled by gravity under the two states of switching and eventually lead to deformation; at the same time, the mechanical recovery of the cantilever beam and the bridge will also cause deformation after fatigue. The distance between the moving part and the fixed part changes, which will affect the design response speed, loss, Q value, etc., and will eventually cause the performance of the RF MEMS switch to decline or even fail.

[0005] For this reason, this field provides some solutions, such as increasing the size of the cantilever beam and the bridge, so that the mechanical strength of the device is increased to resist deformation; or the distance between the movable part and the fixed part of the switch device is enlarged, To reserve a margin for deformation, but doing so will sacrifice the performance of the device. The former prevents the device from being further miniaturized, and the latter reduces the response speed of the device.

Images