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Sintering clamping tool, crimped IGBT module single-surface sintering method and prepared sub module

A sintering method and a crimping technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of high consistency of continuous sintering and sintering, achieve a simple and compact overall structure, ensure high consistency, improve The effect of overall performance

Pending Publication Date: 2019-07-05
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for one-sided sintering of a pressure-connected IGBT module and the IGBT sub-module produced therefrom. Another purpose of the present invention is to provide a method with a simple and compact overall structure capable of continuous sintering And the pressure auxiliary device to ensure the consistent thickness of the sintered structure, to solve the defects in the prior art that cannot be continuously sintered to ensure the high consistency of sintering

Method used

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  • Sintering clamping tool, crimped IGBT module single-surface sintering method and prepared sub module
  • Sintering clamping tool, crimped IGBT module single-surface sintering method and prepared sub module
  • Sintering clamping tool, crimped IGBT module single-surface sintering method and prepared sub module

Examples

Experimental program
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Effect test

Embodiment 1

[0039] step 1:

[0040] according to Figure 4 and Figure 5 Assemble the lower molybdenum sheet 3, soldering sheet 2 and IGBT chip 1 into the sintering jig from bottom to top. The soldering sheet 2 is a low-temperature silver soldering sheet with a thickness of 20 μm and a melting point of 700 ° C. The sintering jig provided by the present invention is as follows: figure 1 and Figure 5 As shown, it includes a bottom plate 7 with a limited hole, a pressure piece 6 with the same size as the bottom plate, several cylindrical positioning pins 8 and limit pins 5 evenly fixed on the bottom plate, the bottom plate 7 is AlN ceramics, AlN ceramics The thermal conductivity is 260W / mK, and the thermal expansion coefficient is 4.5x10-6 / °C, which can prevent deformation in the sintering temperature range, thereby ensuring the high consistency of the sintered workpiece. The positioning pin 8 is metal molybdenum, and the thermal expansion coefficient of metal molybdenum is 4.9 x10-6 / ℃, ...

Embodiment 2

[0048] step 1:

[0049] according to Figure 4 and Figure 5 Assemble the lower molybdenum sheet 3, solder sheet 2 and IGBT chip 1 into the sintering fixture from bottom to top. The solder sheet 2 is a low-temperature silver solder sheet with a thickness of 50 μm and a melting point of 600°C. The sintering fixture is as follows: figure 1 and Figure 5 As shown, it includes a bottom plate 7 with a limited hole, a pressing piece 6 of the same size as the bottom plate, a number of cylindrical positioning pins 8 and limit pins 5 evenly fixed on the bottom plate, the bottom plate is AlN ceramics, and the thermal conductivity of AlN ceramics The coefficient is 260W / mK, and the coefficient of thermal expansion is 4.5x10 -6 / °C, no deformation will occur in the sintering temperature range, thereby ensuring the high consistency of the sintered workpiece. The positioning pin 8 is made of metal molybdenum, and the thermal expansion coefficient of metal molybdenum is 4.9x10 -6 / °C, ca...

Embodiment 3

[0057] step 1:

[0058] according to Figure 4 and Figure 5 Assemble the lower molybdenum sheet 3, solder sheet 2 and IGBT chip 1 into the sintering fixture from bottom to top. The solder sheet 2 is a lead-tin-silver solder sheet with a thickness of 120 μm and a melting point of 900°C. The sintering fixture is as follows: figure 1 and Figure 5 As shown, it includes a bottom plate 7 with a limited hole, a pressing piece 6 of the same size as the bottom plate, a number of cylindrical positioning pins 8 and limit pins 5 evenly fixed on the bottom plate, the bottom plate is AlN ceramics, and the thermal conductivity of AlN ceramics The coefficient is 260W / mK, and the thermal expansion coefficient is 4.5x10-6 / °C, which can prevent deformation in the sintering temperature range, thereby ensuring the high consistency of the sintered workpiece. The positioning pin 8 is metal molybdenum, and the thermal expansion coefficient of metal molybdenum is 4.9x10 -6 / ℃, able to maintain the...

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Abstract

The present invention provides a method of crimped IGBT module single-surface sintering consistency. The method comprises the steps of: assembling a molybdenum sheet, a soldering lug and an IGBT chipinto a sintering card from bottom to top, assembling stop pins to press a pressing piece and employing a continuous vacuum sintering furnace to sinter the structure to prepare a crimped IGBT module single-surface sintering connection structure. The preparation method provided by the invention employs the continuous vacuum sintering furnace to perform large-scale sintering of chips so as to greatlyshorten the process duration, improve the efficiency and improve the speed; and the sintering method provided by the invention converts the contact relation between a part to be sintered and the clamping tool from the surface contact to the point contact so as to solve the problem that the soldering flux overflows to damage the clamping tool and a workpiece cannot be taken out, improve the overflow of the soldering flux in the sintering process and ensure the high consistency of the workpiece after sintering.

Description

technical field [0001] The invention relates to the technical field of crimping IGBT module packaging, in particular to a crimping type IGBT module with single-sided sintering of power chips and a preparation method thereof. Background technique [0002] IGBT ((Insulated Gate Bipolar Transistor)) insulated gate bipolar transistor, as a new generation of fully controlled power electronic devices, has become the mainstream device in the field of power electronics, and with the rapid increase of voltage and current parameters, it has been used in industrial fields, Locomotive traction, smart grid and other fields are rapidly promoted. [0003] Compared with the traditional soldered IGBT module, the press-fit IGBT module has the following advantages: the chip layout is denser, the module current density is higher, and it is easy to realize high current; the chip can dissipate heat on both sides, the heat dissipation is rapid, and the reliability is high; Leads and solder joints...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67
CPCH01L21/67098
Inventor 王亮张朋韩荣刚张喆武伟林仲康石浩田丽纷唐新灵李现兵
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD