Method, circuit and power amplifier for improving overshoot suppression efficiency of power amplifier under the same pulse trigger signal

Abstract

The invention belongs to the field of solid-state microwave power amplifiers, particularly provides a method and circuit for improving the power amplifier overshoot suppression efficiency under the same trigger signa and a power amplifier, and aims to solve the problem that the power amplifier is low in stability or efficiency. The part, in front of a microwave excitation signal, of the pulse power amplifier works in a high-efficiency class B; the falling edge detection circuit is used for detecting the falling edge of an excitation signal of the power amplifier; before the falling edge of theexcitation signal arrives, the grid voltage control circuit is used for adjusting the grid bias voltage, the working type of the power amplifier is changed, and the grid bias voltage is adjusted to the type A, so that the power amplifier works in the type A at the moment of the falling edge of the excitation signal, and the drain voltage does not generate overshoot at the moment of closing the microwave excitation signal. The high stability of the A-type pulse power amplifier and the high efficiency of the B-type pulse power amplifier can be obtained at the same time.

Description

technical field [0001] The invention belongs to the field of solid-state microwave power amplifiers, in particular to a method and circuit for overshoot suppression and efficiency improvement of a pulse power amplifier under the same pulse trigger signal. Background technique [0002] The microwave power amplifier is an important part of the microwave system, which can amplify the weak microwave signal to the required power level, and is generally located at the end of the transmitter. widely used. With the maturity of the third-generation semiconductor material GaN process, the output power of the power amplifier has also increased significantly. At present, the output power of a single tube has exceeded 1kW. For example, the paper A kW-class AlGaN / GaN HEMT Pallet Amplifier for S-band High Power Application published by E.Mitani et al. in 2007 (published in Proceedings of the 2nd European Microwave Integrated Circuits Conference), L.Haapala et al. in 2016 The paper Kilowa...

AI Technical Summary

Problems solved by technology

[0014] The technical problem to be solved by the present invention is: to provide a hybrid high-power solid-state pulse power amplifier voltage overshoot suppression and efficiency improvement method under the same trigger signal, aiming at solving the problem of low stability or low efficiency of the power amplifier, which can simultaneously obtain High stability of class A pulse power amplifier and high efficiency of class B pulse power amplifier

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