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A cavity type bulk acoustic wave resonator and its preparation method

A bulk acoustic wave resonator and cavity technology, applied in the direction of impedance network, electrical components, etc., can solve the problems of low film quality, cavity corrosion residue, etc., and achieve the effects of not easy to damage, high yield, and reducing clutter

Active Publication Date: 2022-03-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The invention provides a cavity-type bulk acoustic resonator and a preparation method thereof to solve the problems of low film quality and formation of corrosion residues in the cavity when preparing cavity-type film bulk acoustic resonators in the prior art

Method used

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  • A cavity type bulk acoustic wave resonator and its preparation method
  • A cavity type bulk acoustic wave resonator and its preparation method
  • A cavity type bulk acoustic wave resonator and its preparation method

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Embodiment 1

[0054] The method of preparing the cavity acoustic resonator of the present embodiment includes the following steps:

[0055] (a) take a substrate, the substrate is a single crystal silicon; an anisotropic etching method using silicon, a cavity layer that blocks the heat flow diffusion in single crystal silicon, specifically: on the substrate Transferring the graphics that needs to be etched, then prepared a mask on the surface of the substrate, and a convex angle compensation portion is provided at the convex angles of the mask, and then wet etching, the process of etching. In the case where the mask of the mask is retained, the portion that is not covered by the mask is etched away, forming a cavity; the wet etching can perform single crystal silicon anisotropic etching, due to When a wet etch etching single crystal silicon, the corrosion liquid will have the fastest corrosion rate below the "holes" structure in the mask pattern, so Figure 11 As shown, by etching graphical desig...

Embodiment 2

[0068] The method of preparing the cavity acoustic resonator of the present embodiment includes the following steps:

[0069](a) Repair the substrate, the substrate is single crystal silicon; a support film is grown on the substrate, and then the side of the growth support film is patterned, etching the support film, forming a cavity. The support film is SiO 2 . Such as figure 2 As shown, the structure of the substrate having a cavity obtained in step (a) is shown.

[0070] As the implementation of the present embodiment, the support surface and the substrate can also be etched.

[0071] (b) Repairing the electrical single crystal wafer, the piezoelectric single crystal wafer is a lithium chipylate wafer, and ion implantation is performed on the piezoelectric single crystal wafer, and the implanted ion is H ion, and the energy injected into ions. In 195kev, the injection dose is 6 × 10 16 / cm 2 1 μm / cm -2 The injection depth is 6 μm to obtain a heat removal material, and then, ...

Embodiment 3

[0077] The method of preparing the cavity vapor resonator of the present embodiment is prepared using the same method as in Example 1, and the difference is only that the bottom electrode is larger than the upper surface area of ​​the cavity.

[0078] Such as Figure 8 As shown, a structural diagram of the extracted ion implantation obtained in step (b) and having a piezoelectric single crystal wafer of the bottom electrode.

[0079] Such as Figure 9 As shown, the structure is shown in the structural diagram of the side coating of the pressure single crystal wafer in step (c);

[0080] Figure 10 The structural diagram of the cavity body acoustic wave resonator in step (d) of the method of preparing a cavity acoustic resonator in Example 3 of the present invention.

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Abstract

The invention provides a cavity-type bulk acoustic wave resonator and a preparation method thereof, which is characterized in that it comprises the following steps: taking a piezoelectric single crystal wafer with a bottom electrode after ion implantation and a substrate with a cavity, and The side of the piezoelectric single crystal wafer having the bottom electrode is bonded to the side of the substrate having the cavity, and after bonding, it is heat treated to peel off the thin film of the piezoelectric single crystal wafer, Then produce a top electrode on the peeled side of the piezoelectric single crystal wafer. The preparation method of the cavity-type bulk acoustic wave resonator of the present invention does not need to grow a sacrificial layer, does not etch and open the thin film, improves the mechanical strength of the device, and is not easy to damage the thin film; the cavity structure is formed before the film is formed , the yield is high, and there will be no residue left by etching after film formation, and there is no need to consider the impact of incomplete release on the device.

Description

Technical field [0001] The present invention belongs to the technical field of single crystal thin film devices, and in particular, the present invention relates to a cavity vapor resonator and a preparation method thereof. Background technique [0002] Film Bulk Acoustic Wave Resonator, FBAR is a single crystal thin film device. In recent years, with the improvement of the level of processing and the rapid development of wireless communications, the film-body acoustic resonator has developed faster due to its high Q value (greater than 1000) and the advantages of compatibility with CMOS process. Its electrical energy is converted into acoustic waves by the reverse pressure electrical effect of the piezoelectric film to form resonance. The resonant cavity of the thin film acoustic resonator is supported by a piezoelectric film, a sandwich structure having a piezoelectric film is sandwiched between two metal electrodes, and the resonant frequency is mainly opposed to the thickness...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H3/02H03H9/02H03H9/17
CPCH03H3/02H03H9/02015H03H9/02086H03H9/171H03H2003/023
Inventor 吴传贵罗佳瑞帅垚罗文博
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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